Data | Título | Autor(es) | Tipo | Acesso |
28-Dez-2015 | Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy | Oliveira, F.; Fischer, I. A.; Benedetti, A., et al. | Artigo | Acesso restrito UMinho |
2015 | Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis | Oliveira, F.; Fischer, I. A.; Benedetti, A., et al. | Artigo | Acesso aberto |
2016 | Photoluminescence from ultrathin Ge-rich multi-quantum wells observed up to room-temperature: experiments and modeling | Wendav, T.; Fischer, I. A.; Virgilio, M., et al. | Artigo | Acesso aberto |
19-Mar-2018 | Structural and vibrational properties of SnxGe1-x: Modeling and experiments | Vasin, A. S.; Oliveira, F.; Cerqueira, M. F., et al. | Artigo | Acesso aberto |