Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/48119

TitleFabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy
Author(s)Oliveira, F.
Fischer, I. A.
Benedetti, A.
Zaumseil, P.
Cerqueira, M. F.
Vasilevskiy, Mikhail
Stefanov, S.
Chiussi, S.
Schulze, J.
Issue date28-Dec-2015
PublisherAmerican Institute of Physics
JournalApplied Physics Letters
Abstract(s)We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (approximate to 14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.
TypeArticle
URIhttp://hdl.handle.net/1822/48119
DOI10.1063/1.4938746
ISSN0003-6951
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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