Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/39103

TitleMulti-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
Author(s)Oliveira, F.
Fischer, I. A.
Benedetti, A.
Cerqueira, M. F.
Vasilevskiy, Mikhail
Stefanov, S.
Chiussi, S.
Schulze, J.
KeywordsSelf-assembled GeSn dots
Molecular beam epitaxy
TEM&AFM
Raman
Issue date2015
PublisherAIP Publishing
JournalJournal of Applied Physics
CitationOliveira, F., Fischer, I. A., Benedetti, A., Cerqueira, M. F., Vasilevskiy, M. I., Stefanov, S., . . . Schulze, J. (2015). Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis. Journal of Applied Physics, 117(12). doi: 10.1063/1.4915939
Abstract(s)We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.
TypeArticle
URIhttp://hdl.handle.net/1822/39103
DOI10.1063/1.4915939
ISSN0021-8979
Publisher versionhttp://dx.doi.org/10.1063/1.4915939
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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