Please use this identifier to cite or link to this item:
|Title:||Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis|
Fischer, I. A.
Cerqueira, M. F.
|Keywords:||Self-assembled GeSn dots|
Molecular beam epitaxy
|Journal:||Journal of Applied Physics|
|Citation:||Oliveira, F., Fischer, I. A., Benedetti, A., Cerqueira, M. F., Vasilevskiy, M. I., Stefanov, S., . . . Schulze, J. (2015). Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis. Journal of Applied Physics, 117(12). doi: 10.1063/1.4915939|
|Abstract(s):||We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.|
|Appears in Collections:||CDF - CEP - Artigos/Papers (with refereeing)|
Files in This Item:
|Multi-stacks of epitaxial GeSn self-assembled dots in Si Structural analysis.pdf||816,46 kB||Adobe PDF||View/Open|