Please use this identifier to cite or link to this item: https://hdl.handle.net/1822/87462

Title9.9 V high-voltage switch in a standard 180 nm CMOS technology for MEMS inclinometers
Author(s)Barreira, Francisco
García-López, Iria
Darós, Thiago
Minas, Graça
Piteira, João
KeywordsHigh Voltage
Standard CMOS
HV-Switch
Actuation MEMS
Issue date18-Jun-2023
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
CitationF. Barreira, I. García-López, T. Darós, G. Minas and J. Piteira, "9.9 V High-Voltage Switch in a standard 180 nm CMOS technology for MEMS Inclinometers," 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), Valencia, Spain, 2023, pp. 301-304, doi: 10.1109/PRIME58259.2023.10161895.
Abstract(s)In this paper a high-voltage switch, capable of delivering a voltage of 9.9 V to a MEMS actuator is presented. This circuit is implemented in a standard 180 nm CMOS technology with a nominal voltage of 3.3 V for the I/O transistors. The switch is implemented following the stacked transistors principle, to ensure that none of the devices is stressed beyond acceptable limits. Moreover, all the auxiliary circuitry such as the pre-driver and voltage buffers required to generate the intermediate voltage levels are described in detail. Compared to other designs shown in the literature, the implementation presented here enables the largest tuning of the output range, from 5 V to 9.9 V. Post-layout simulation results validate the successful operation of the proposed architecture.
TypeConference paper
URIhttps://hdl.handle.net/1822/87462
ISBN979-8-3503-0320-9
DOI10.1109/PRIME58259.2023.10161895
Publisher versionhttps://ieeexplore.ieee.org/document/10161895
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CMEMS - Artigos em livros de atas/Papers in proceedings

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