Please use this identifier to cite or link to this item: https://hdl.handle.net/1822/87462

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dc.contributor.authorBarreira, Franciscopor
dc.contributor.authorGarcía-López, Iriapor
dc.contributor.authorDarós, Thiagopor
dc.contributor.authorMinas, Graçapor
dc.contributor.authorPiteira, Joãopor
dc.date.accessioned2023-12-06T10:10:00Z-
dc.date.issued2023-06-18-
dc.identifier.citationF. Barreira, I. García-López, T. Darós, G. Minas and J. Piteira, "9.9 V High-Voltage Switch in a standard 180 nm CMOS technology for MEMS Inclinometers," 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), Valencia, Spain, 2023, pp. 301-304, doi: 10.1109/PRIME58259.2023.10161895.por
dc.identifier.isbn979-8-3503-0320-9-
dc.identifier.urihttps://hdl.handle.net/1822/87462-
dc.description.abstractIn this paper a high-voltage switch, capable of delivering a voltage of 9.9 V to a MEMS actuator is presented. This circuit is implemented in a standard 180 nm CMOS technology with a nominal voltage of 3.3 V for the I/O transistors. The switch is implemented following the stacked transistors principle, to ensure that none of the devices is stressed beyond acceptable limits. Moreover, all the auxiliary circuitry such as the pre-driver and voltage buffers required to generate the intermediate voltage levels are described in detail. Compared to other designs shown in the literature, the implementation presented here enables the largest tuning of the output range, from 5 V to 9.9 V. Post-layout simulation results validate the successful operation of the proposed architecture.por
dc.description.sponsorship(undefined)por
dc.language.isoengpor
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)por
dc.rightsrestrictedAccesspor
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/por
dc.subjectHigh Voltagepor
dc.subjectStandard CMOSpor
dc.subjectHV-Switchpor
dc.subjectActuation MEMSpor
dc.title9.9 V high-voltage switch in a standard 180 nm CMOS technology for MEMS inclinometerspor
dc.typeconferencePaperpor
dc.peerreviewedyespor
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/10161895por
oaire.citationStartPage301por
oaire.citationEndPage304por
oaire.citationConferencePlaceValencia, Spainpor
dc.identifier.doi10.1109/PRIME58259.2023.10161895por
dc.date.embargo10000-01-01-
dc.subject.fosEngenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informáticapor
sdum.conferencePublication2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)por
oaire.versionVoRpor
Appears in Collections:CMEMS - Artigos em livros de atas/Papers in proceedings

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