Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/87462
Registo completo
Campo DC | Valor | Idioma |
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dc.contributor.author | Barreira, Francisco | por |
dc.contributor.author | García-López, Iria | por |
dc.contributor.author | Darós, Thiago | por |
dc.contributor.author | Minas, Graça | por |
dc.contributor.author | Piteira, João | por |
dc.date.accessioned | 2023-12-06T10:10:00Z | - |
dc.date.issued | 2023-06-18 | - |
dc.identifier.citation | F. Barreira, I. García-López, T. Darós, G. Minas and J. Piteira, "9.9 V High-Voltage Switch in a standard 180 nm CMOS technology for MEMS Inclinometers," 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), Valencia, Spain, 2023, pp. 301-304, doi: 10.1109/PRIME58259.2023.10161895. | por |
dc.identifier.isbn | 979-8-3503-0320-9 | - |
dc.identifier.uri | https://hdl.handle.net/1822/87462 | - |
dc.description.abstract | In this paper a high-voltage switch, capable of delivering a voltage of 9.9 V to a MEMS actuator is presented. This circuit is implemented in a standard 180 nm CMOS technology with a nominal voltage of 3.3 V for the I/O transistors. The switch is implemented following the stacked transistors principle, to ensure that none of the devices is stressed beyond acceptable limits. Moreover, all the auxiliary circuitry such as the pre-driver and voltage buffers required to generate the intermediate voltage levels are described in detail. Compared to other designs shown in the literature, the implementation presented here enables the largest tuning of the output range, from 5 V to 9.9 V. Post-layout simulation results validate the successful operation of the proposed architecture. | por |
dc.description.sponsorship | (undefined) | por |
dc.language.iso | eng | por |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | por |
dc.rights | restrictedAccess | por |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | por |
dc.subject | High Voltage | por |
dc.subject | Standard CMOS | por |
dc.subject | HV-Switch | por |
dc.subject | Actuation MEMS | por |
dc.title | 9.9 V high-voltage switch in a standard 180 nm CMOS technology for MEMS inclinometers | por |
dc.type | conferencePaper | por |
dc.peerreviewed | yes | por |
dc.relation.publisherversion | https://ieeexplore.ieee.org/document/10161895 | por |
oaire.citationStartPage | 301 | por |
oaire.citationEndPage | 304 | por |
oaire.citationConferencePlace | Valencia, Spain | por |
dc.identifier.doi | 10.1109/PRIME58259.2023.10161895 | por |
dc.date.embargo | 10000-01-01 | - |
dc.subject.fos | Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática | por |
sdum.conferencePublication | 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) | por |
oaire.version | VoR | por |
Aparece nas coleções: | CMEMS - Artigos em livros de atas/Papers in proceedings |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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9.9_V_High-Voltage_Switch_in_a_standard_180_nm_CMOS_technology_for_MEMS_Inclinometers.pdf Acesso restrito! | 671,85 kB | Adobe PDF | Ver/Abrir |
Este trabalho está licenciado sob uma Licença Creative Commons