Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/5559

TitleControl of the deposition ratio of Bi2Te3 and Sb2Te3 in a vacuum evaporator for fabrication of Peltier elements
Author(s)Gonçalves, L. M.
Rocha, J. G.
Correia, J. H.
Couto, Carlos
KeywordsCo-evaporation
Compound
Deposition rate
PID
Peltier
Bismuth Telluride
Issue date2006
PublisherIEEE
CitationIEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, Québec, Canada, 2006 – “ISIE 2006 : proceedings”. [S.l.] : IEEE, 2006. ISBN 1-4244-0497-5. p. 2773-2777.
Abstract(s)This article reports the main problem and the corresponding solution of the co-evaporation of Bi2Te3 and Sb2Te3 films for the fabrication of Peltier elements. This main problem consists in the control of the deposition rates of the two elements: Bi or Sb and Te, which have very different vapor pressures. The control of the deposition ratio was achieved by means of a PID controller, which permitted the fabrication of thin-film Peltier elements that produce a temperature gradient in the order of 2C between their hot and cold junctions, when measured at free air conditions.
TypeConference paper
URIhttp://hdl.handle.net/1822/5559
ISBN1-4244-0497-5
DOI10.1109/ISIE.2006.296053
Peer-Reviewedyes
AccessOpen access
Appears in Collections:DEI - Artigos em atas de congressos internacionais

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