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TitleControl of the deposition ratio of Bi2Te3 and Sb2Te3 in a vacuum evaporator for fabrication of Peltier elements
Author(s)Gonçalves, L. M.
Rocha, J. G.
Correia, J. H.
Couto, Carlos
Deposition rate
Bismuth Telluride
Issue date2006
CitationIEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, Québec, Canada, 2006 – “ISIE 2006 : proceedings”. [S.l.] : IEEE, 2006. ISBN 1-4244-0497-5. p. 2773-2777.
Abstract(s)This article reports the main problem and the corresponding solution of the co-evaporation of Bi2Te3 and Sb2Te3 films for the fabrication of Peltier elements. This main problem consists in the control of the deposition rates of the two elements: Bi or Sb and Te, which have very different vapor pressures. The control of the deposition ratio was achieved by means of a PID controller, which permitted the fabrication of thin-film Peltier elements that produce a temperature gradient in the order of 2C between their hot and cold junctions, when measured at free air conditions.
TypeConference paper
AccessOpen access
Appears in Collections:DEI - Artigos em atas de congressos internacionais

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