Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/5559

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dc.contributor.authorGonçalves, L. M.-
dc.contributor.authorRocha, J. G.-
dc.contributor.authorCorreia, J. H.-
dc.contributor.authorCouto, Carlos-
dc.date.accessioned2006-09-15T15:46:50Z-
dc.date.available2006-09-15T15:46:50Z-
dc.date.issued2006-
dc.identifier.citationIEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, Québec, Canada, 2006 – “ISIE 2006 : proceedings”. [S.l.] : IEEE, 2006. ISBN 1-4244-0497-5. p. 2773-2777.eng
dc.identifier.isbn1-4244-0497-5-
dc.identifier.urihttps://hdl.handle.net/1822/5559-
dc.description.abstractThis article reports the main problem and the corresponding solution of the co-evaporation of Bi2Te3 and Sb2Te3 films for the fabrication of Peltier elements. This main problem consists in the control of the deposition rates of the two elements: Bi or Sb and Te, which have very different vapor pressures. The control of the deposition ratio was achieved by means of a PID controller, which permitted the fabrication of thin-film Peltier elements that produce a temperature gradient in the order of 2C between their hot and cold junctions, when measured at free air conditions.eng
dc.description.sponsorshipFundação para a Ciência e a Tecnologia (FCT) - SFRH/BD/18142/2004.por
dc.description.sponsorshipAgencia de Inovação (MPYROM).por
dc.language.isoengeng
dc.publisherIEEEeng
dc.rightsopenAccesseng
dc.subjectCo-evaporationeng
dc.subjectCompoundeng
dc.subjectDeposition rateeng
dc.subjectPIDeng
dc.subjectPeltiereng
dc.subjectBismuth Tellurideeng
dc.titleControl of the deposition ratio of Bi2Te3 and Sb2Te3 in a vacuum evaporator for fabrication of Peltier elementseng
dc.typeconferencePapereng
dc.peerreviewedyeseng
oaire.citationStartPage2773por
oaire.citationEndPage+por
dc.identifier.doi10.1109/ISIE.2006.296053por
dc.subject.wosScience & Technologypor
sdum.bookTitle2006 IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, VOLS 1-7por
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