Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/5469

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Campo DCValorIdioma
dc.contributor.authorVasilevskiy, Mikhail-
dc.contributor.authorRolo, Anabela G.-
dc.contributor.authorGomes, M. J. M.-
dc.date.accessioned2006-08-24T10:32:14Z-
dc.date.available2006-08-24T10:32:14Z-
dc.date.issued1997-
dc.identifier.citation"Solid state communications". 0038-1098. 104:7 (Nov. 1997) 381-386.eng
dc.identifier.issn0038-1098eng
dc.identifier.urihttps://hdl.handle.net/1822/5469-
dc.description.abstractWe re-consider Raman scattering by LO-type phonons in a small semiconductor crystal and derive a simple formula taking into account the higher order confined phonon modes, to describe the asymmetric Raman lineshapes observed experimentally. For a single crystalline sphere, we explicitly calculate the relative contributions of the confined modes with different values of the radial quantum number. For arrays of such spheres, we argue that, apart from a superposition of the above contributions from individual scatterers, there exists a collective scattering by a coherent mode which involves many spheres, unless their concentration is too small. This collective scattering is determined by an effective dielectric function of the composite medium and peaks near the Fröhlich frequency. We apply these principles to the analysis and modelling of Raman spectra taken from CdS doped SiO2 films.eng
dc.description.sponsorshipFundação para a Ciência e a Tecnologia (FCT)por
dc.language.isoengeng
dc.publisherPergamon Presseng
dc.rightsopenAccesseng
dc.subjectPhononseng
dc.subjectQuantum doteng
dc.subjectRaman spectroscopyeng
dc.subjectD. dielectric responsepor
dc.subjectD. phononspor
dc.subjectdielectric responsepor
dc.titleOne-phonon Raman scattering from arrays of semiconductor nano-crystalseng
dc.typearticlepor
dc.peerreviewedyespor
sdum.number7eng
sdum.pagination381-86eng
sdum.publicationstatuspublishedeng
sdum.volume104eng
oaire.citationStartPage381por
oaire.citationEndPage386por
oaire.citationIssue7por
oaire.citationVolume104por
dc.identifier.doi10.1016/S0038-1098(97)00356-6por
dc.subject.wosScience & Technologypor
sdum.journalSolid state communicationspor
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CDF - FMNC - Artigos/Papers (with refereeing)

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