Please use this identifier to cite or link to this item: https://hdl.handle.net/1822/4287

TitleCMOS x-ray image sensor with pixel level A/D conversion
Author(s)Rocha, J. G.
Ramos, N. F.
Wolffenbuttel, R. F.
Correia, J. H.
Issue date2003
PublisherIEEE
JournalEuropean Solid-State Circuits Conference
CitationESSCIRC'03 - SOLID STATE CIRCUITS CONFERENCE, Estoril, 2003 - "Solid State Circuits Conference : Proceedings". [S.l. : s.n., 2003]
Abstract(s)This paper describes a pixel array for x-rays imaging consisting in 400 um x 400 um photodiodes fabricated in CMOS technology, with an A/D converter for each one. Above the photodiodes, an array of scintillating CsI:Tl crystals are placed. So, the x-ray energy is first converted to visible light by the scintillating crystals which is then detected by the photodiodes. The photocurrent produced by each photodiode is finally converted to a digital form by a sigma-delta analog to digital converter. The sigma-delta a/d converter uses 18 minimum-size MOSFETs and one capacitor. 8 to 10 bits of resolution can be achieved.
TypeConference paper
URIhttps://hdl.handle.net/1822/4287
ISBN0780379950
DOI10.1109/ESSCIRC.2003.1257087
Peer-Reviewedyes
AccessOpen access
Appears in Collections:DEI - Artigos em atas de congressos internacionais

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