Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/39804

TitleEffect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers
Author(s)Alpuim, P.
Majee, S.
Cerqueira, M. F.
Tondelier, D.
Geffroy, B.
Bonnassieux, Y.
Bourée, J. E.
KeywordsSilicon nitride
Hot-wire CVD
Low-temperature deposition
Ar plasma treatment
Permeation barrier
Polymer substrate
Issue date2015
PublisherElsevier
JournalThin Solid Films
CitationAlpuim, P., Majee, S., Cerqueira, M. F., Tondelier, D., Geffroy, B., Bonnassieux, Y., & Bouree, J. E. (2015). Effect of argon ion energy on the performance of silicon nitride multilayer permeation barriers grown by hot-wire CVD on polymers. Thin Solid Films, 595, 258-265. doi: 10.1016/j.tsf.2015.09.048
Abstract(s)Permeation barriers for organic electronic devices on polymer flexible substrates were realized by combining stacked silicon nitride (SiNx) single layers (50 nm thick) deposited by hot-wire chemical vapor deposition process at low-temperature (~100°C) with a specific argon plasma treatment between two successive layers. Several plasma parameters (RF power density, pressure, treatment duration) as well as the number of single layers have been explored in order to improve the quality of permeation barriers deposited on polyethylene terephthalate. In this work, maximumion energy was highlighted as the crucial parameter making it possible to minimize water vapor transmission rate (WVTR), as determined by the electrical calcium test method, all the other parameters being kept fixed. Thus fixing the plasma treatment duration at 8 min for a stack of two SiNx single layers, a minimum WVTR of 5 × 10−4 g/(m2 day), measured at room temperature, was found for a maximum ion energy of ~30 eV. This minimum WVTR value was reduced to 7 × 10−5 g/(m2 day) for a stack of five SiNx single layers. The reduction in the permeability is interpreted as due to the rearrangement of atoms at the interfaces when average transferred ion energy to target atoms exceeds threshold displacement energy.
TypeArticle
DescriptionOne of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support.
URIhttp://hdl.handle.net/1822/39804
DOI10.1016/j.tsf.2015.09.048
ISSN0040-6090
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S0040609015009268
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)


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