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dc.contributor.authorAlpuim, P.por
dc.contributor.authorMajee, S.por
dc.contributor.authorCerqueira, M. F.por
dc.contributor.authorTondelier, D.por
dc.contributor.authorGeffroy, B.por
dc.contributor.authorBonnassieux, Y.por
dc.contributor.authorBourée, J. E.por
dc.identifier.citationAlpuim, P., Majee, S., Cerqueira, M. F., Tondelier, D., Geffroy, B., Bonnassieux, Y., & Bouree, J. E. (2015). Effect of argon ion energy on the performance of silicon nitride multilayer permeation barriers grown by hot-wire CVD on polymers. Thin Solid Films, 595, 258-265. doi: 10.1016/j.tsf.2015.09.048por
dc.descriptionOne of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support.por
dc.description.abstractPermeation barriers for organic electronic devices on polymer flexible substrates were realized by combining stacked silicon nitride (SiNx) single layers (50 nm thick) deposited by hot-wire chemical vapor deposition process at low-temperature (~100°C) with a specific argon plasma treatment between two successive layers. Several plasma parameters (RF power density, pressure, treatment duration) as well as the number of single layers have been explored in order to improve the quality of permeation barriers deposited on polyethylene terephthalate. In this work, maximumion energy was highlighted as the crucial parameter making it possible to minimize water vapor transmission rate (WVTR), as determined by the electrical calcium test method, all the other parameters being kept fixed. Thus fixing the plasma treatment duration at 8 min for a stack of two SiNx single layers, a minimum WVTR of 5 × 10−4 g/(m2 day), measured at room temperature, was found for a maximum ion energy of ~30 eV. This minimum WVTR value was reduced to 7 × 10−5 g/(m2 day) for a stack of five SiNx single layers. The reduction in the permeability is interpreted as due to the rearrangement of atoms at the interfaces when average transferred ion energy to target atoms exceeds threshold displacement energy.por
dc.description.sponsorshipThe authors are grateful to Dr. R. Cortes (PMC, Ecole Polytechnique) for XRR analysis, to Dr. P. Chapon (HORIBA Jobin Yvon) for GD-OES analysis and Dr. J. Leroy (CEA Saclay) for XPS analysis. This work was partly supported by the PICS (FrenchPortuguese) project No. 5336. One of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support.por
dc.subjectSilicon nitridepor
dc.subjectHot-wire CVDpor
dc.subjectLow-temperature depositionpor
dc.subjectAr plasma treatmentpor
dc.subjectPermeation barrierpor
dc.subjectPolymer substratepor
dc.titleEffect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymerspor
oaire.citationTitleThin Solid Filmspor
dc.subject.fosCiências Naturais::Ciências Físicaspor
dc.subject.wosScience & Technologypor
sdum.journalThin Solid Filmspor
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