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|Title:||High-aspect-ratio neural electrode array fabrication using thermomigration process|
|Author(s):||Peixoto, A. C.|
Silva, A. F.
Dias, N. S.
Correia, J. H.
|Keywords:||Invasive neural electrode|
|Publisher:||Elsevier Science BV|
|Abstract(s):||A novel fabrication process for a high-aspect-ratio recording and stimulation intracortical neural microelectrode array is described. Using a combination of dicing and KOH wet-etching, microspikes are formed on the surface of a n-type (100), 4 mm thick, silicon wafer. Deep 3 mm cuts are performed in order to produce sharped tip pillars of high-aspect-ratio (0.2x0.2x3 mm). Thermomigration is employed as a selective doping technique performing electrically insulated pillars due to the pn back biased junctions formed between each pair of n-type substrate and p+ migrated trails. Gold is deposited over the spikes in order to have a good ionic interface with the neural tissue, while the remaining surface is passivated with a biocompatible layer of cyanoacrylate. The final result is a deep penetrating electrode array with potential new applications in neuroprosthetics’ research field.|
|Access:||Restricted access (UMinho)|
|Appears in Collections:|
DEI - Artigos em atas de congressos internacionais
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|High-aspect-ratio neural electrode array fabrication using thermomigration process.pdf|
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