Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/21100

TitleHigh-aspect-ratio neural electrode array fabrication using thermomigration process
Author(s)Peixoto, A. C.
Silva, A. F.
Dias, N. S.
Correia, J. H.
KeywordsInvasive neural electrode
Microelectrode array
Thermomigration
Silicon
Issue dateSep-2012
PublisherElsevier Science BV
JournalProcedia Engineering
Abstract(s)A novel fabrication process for a high-aspect-ratio recording and stimulation intracortical neural microelectrode array is described. Using a combination of dicing and KOH wet-etching, microspikes are formed on the surface of a n-type (100), 4 mm thick, silicon wafer. Deep 3 mm cuts are performed in order to produce sharped tip pillars of high-aspect-ratio (0.2x0.2x3 mm). Thermomigration is employed as a selective doping technique performing electrically insulated pillars due to the pn back biased junctions formed between each pair of n-type substrate and p+ migrated trails. Gold is deposited over the spikes in order to have a good ionic interface with the neural tissue, while the remaining surface is passivated with a biocompatible layer of cyanoacrylate. The final result is a deep penetrating electrode array with potential new applications in neuroprosthetics’ research field.
TypeConference paper
URIhttp://hdl.handle.net/1822/21100
DOI10.1016/j.proeng.2012.09.212
ISSN1877-7058
Publisher versionhttp://www.sciencedirect.com/s
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CAlg - Artigos em livros de atas/Papers in proceedings
DEI - Artigos em atas de congressos internacionais

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