Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/19316

TitleTuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions
Author(s)Pinto, S. R. C.
Buljan, M.
Chahboun, A.
Roldan, M. A.
Bernstorff, S.
Varela, M.
Pennycook, S. J.
Barradas, N. P.
Alves, E.
Molina, S. I.
Ramos, Marta M. D.
Gomes, M. J. M.
Issue dateApr-2012
PublisherAIP Publishing
JournalJournal of Applied Physics
Abstract(s)In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (GeþSiO2)/SiO2 multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (GeþSiO2) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.
TypeArticle
URIhttp://hdl.handle.net/1822/19316
DOI10.1063/1.3702776
ISSN0021-8979
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FCT - Artigos/Papers (with refereeing)

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