Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/19316
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Campo DC | Valor | Idioma |
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dc.contributor.author | Pinto, S. R. C. | - |
dc.contributor.author | Buljan, M. | - |
dc.contributor.author | Chahboun, A. | - |
dc.contributor.author | Roldan, M. A. | - |
dc.contributor.author | Bernstorff, S. | - |
dc.contributor.author | Varela, M. | - |
dc.contributor.author | Pennycook, S. J. | - |
dc.contributor.author | Barradas, N. P. | - |
dc.contributor.author | Alves, E. | - |
dc.contributor.author | Molina, S. I. | - |
dc.contributor.author | Ramos, Marta M. D. | - |
dc.contributor.author | Gomes, M. J. M. | - |
dc.date.accessioned | 2012-05-15T15:00:25Z | - |
dc.date.available | 2012-05-15T15:00:25Z | - |
dc.date.issued | 2012-04 | - |
dc.identifier.issn | 0021-8979 | por |
dc.identifier.uri | https://hdl.handle.net/1822/19316 | - |
dc.description.abstract | In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (GeþSiO2)/SiO2 multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (GeþSiO2) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters. | por |
dc.description.sponsorship | This study has been partially funded through the projects FEDER funds through the COMPETE program “Programa Operacional Factores de Competitividade” and by Portu- guese funds through the Portuguese foundation for Science and Technology (FCT) in the frame of the project PTDC/ FIS/70194/2006, and the ELETTRA Synchrotron Radiation Center through the European Community´s Seventh Frame-work Programme (FP7/2007-2013) under grant agreement no. 226716. S.R.C.P is grateful for financial support through the FCT grant SFRH/BPD/73548/2010. M.B. acknowledges support from the Croatian Ministry of Science, Higher Education and Sport, (project number 098-0982886-2866). S. I. M. acknowledges support by the Spanish MICINN/MEC (projects TEC2011-29120-C05-03 and CONSOLIDER INGENIO CSD2009-00013) and the Junta de Andalucı´a (PAI research group TEP-946; project P08-TEP-03516). Co-financing from UE-FEDER is also acknowledged. Work at ORNL supported by the Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, U. S. Department of Energy (S. J. P., M. V.). | por |
dc.language.iso | eng | por |
dc.publisher | AIP Publishing | por |
dc.relation | info:eu-repo/grantAgreement/EC/FP7/226716 | - |
dc.rights | restrictedAccess | por |
dc.title | Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions | por |
dc.type | article | por |
dc.peerreviewed | yes | por |
sdum.publicationstatus | published | por |
oaire.citationStartPage | 1 | por |
oaire.citationEndPage | 6 | por |
oaire.citationIssue | 7 | por |
oaire.citationTitle | Journal of Applied Physics | por |
oaire.citationVolume | 111 | por |
dc.identifier.doi | 10.1063/1.3702776 | por |
dc.subject.wos | Science & Technology | por |
sdum.journal | Journal of Applied Physics | por |
Aparece nas coleções: | CDF - FCT - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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A74-2012-Tuning the properties of Ge-quantum.pdf Acesso restrito! | A74-2012 | 1,13 MB | Adobe PDF | Ver/Abrir |