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TitleAnnealing effect on the photoluminescence of ge-doped silica films
Author(s)Rolo, Anabela G.
Chahboun, A.
Conde, O.
Vasilevskiy, Mikhail
Gomes, M. J. M.
Issue dateJan-2008
JournalPhysica E
Abstract(s)SiO2 thin films doped with Ge nanocrystals (NCs) were grown using the RF-sputtering technique. X-ray diffraction studies revealed a diamond structure for Ge NCs. The presence of Ge NCs in the grown films was also confirmed by Raman spectroscopy. Photoluminescence spectroscopy of the samples revealed an emission band at 2.07 eV, which is tentatively attributed to defects located at the Ge-matrix interface. This was found to be quite sensitive to variations of local matrix composition, induced by the annealing process.
DescriptionThe authors are grateful to Dr. L. Rebouta for the RBS studies and to Dr. G. Hungerford for his careful reading of the manuscript.
Publisher version
AccessRestricted access (UMinho)
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)
CDF - FMNC - Artigos/Papers (with refereeing)

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