Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/16959

TitleAnnealing effect on the photoluminescence of ge-doped silica films
Author(s)Rolo, Anabela G.
Chahboun, A.
Conde, O.
Vasilevskiy, Mikhail
Gomes, M. J. M.
KeywordsGermanium
Nanocrystals
Photoluminescence
Defects
Issue dateJan-2008
PublisherElsevier
JournalPhysica E
Abstract(s)SiO2 thin films doped with Ge nanocrystals (NCs) were grown using the RF-sputtering technique. X-ray diffraction studies revealed a diamond structure for Ge NCs. The presence of Ge NCs in the grown films was also confirmed by Raman spectroscopy. Photoluminescence spectroscopy of the samples revealed an emission band at 2.07 eV, which is tentatively attributed to defects located at the Ge-matrix interface. This was found to be quite sensitive to variations of local matrix composition, induced by the annealing process.
TypeArticle
DescriptionThe authors are grateful to Dr. L. Rebouta for the RBS studies and to Dr. G. Hungerford for his careful reading of the manuscript.
URIhttp://hdl.handle.net/1822/16959
DOI10.1016/j.physe.2007.09.144
ISSN1386-9477
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S1386947707005668
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)
CDF - FMNC - Artigos/Papers (with refereeing)

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