Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/11748
Título: | Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC |
Autor(es): | Alpuim, P. Gonçalves, L. M. Marins, Emílio Sérgio Viseu, T. M. R. Ferdov, S. Bourée, J. E. |
Palavras-chave: | Hot-wire CVD Silicon nitride Dielectric Low-temperature deposition Electronic transport |
Data: | Abr-2009 |
Editora: | Elsevier 1 |
Revista: | Thin Solid Films |
Citação: | "Thin Solid Films." ISSN 0040-6090. 517:12 (Abr. 2009) 3503-3506. |
Resumo(s): | Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 Ǻ/s) and at low substrate temperature. Films were deposited using NH3/SiH4 flow rate ratios between 1 and 70 and substrate temperatures of 100º C and 250ºC. For NH3/SiH4 ratios between 40 and 70, highly transparent (T ~ 90%), dense films (2.56 - 2.74 g/cm3) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 Ǻ/s and <0.5 Ǻ/s were obtained for films deposited at 100ºC and 250ºC, respectively. Films deposited at both substrate temperatures showed electrical conductivity ~ 10-14 Ω-1cm-1 and breakdown fields >10 MV cm−1. |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/11748 |
DOI: | 10.1016/j.tsf.2009.01.077 |
ISSN: | 0040-6090 |
Versão da editora: | http://www.sciencedirect.com/ |
Arbitragem científica: | yes |
Acesso: | Acesso aberto |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
---|---|---|---|---|
HW5-57_rev.pdf | 377,35 kB | Adobe PDF | Ver/Abrir |