Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/11748

TitleDeposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC
Author(s)Alpuim, P.
Gonçalves, L. M.
Marins, Emílio Sérgio
Viseu, T. M. R.
Ferdov, S.
Bourée, J. E.
KeywordsHot-wire CVD
Silicon nitride
Dielectric
Low-temperature deposition
Electronic transport
Issue dateApr-2009
PublisherElsevier
JournalThin Solid Films
Citation"Thin Solid Films." ISSN 0040-6090. 517:12 (Abr. 2009) 3503-3506.
Abstract(s)Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 Ǻ/s) and at low substrate temperature. Films were deposited using NH3/SiH4 flow rate ratios between 1 and 70 and substrate temperatures of 100º C and 250ºC. For NH3/SiH4 ratios between 40 and 70, highly transparent (T ~ 90%), dense films (2.56 - 2.74 g/cm3) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 Ǻ/s and <0.5 Ǻ/s were obtained for films deposited at 100ºC and 250ºC, respectively. Films deposited at both substrate temperatures showed electrical conductivity ~ 10-14 Ω-1cm-1 and breakdown fields >10 MV cm−1.
TypeArticle
URIhttp://hdl.handle.net/1822/11748
DOI10.1016/j.tsf.2009.01.077
ISSN0040-6090
Publisher versionhttp://www.sciencedirect.com/
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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