Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/11748
Registo completo
Campo DC | Valor | Idioma |
---|---|---|
dc.contributor.author | Alpuim, P. | - |
dc.contributor.author | Gonçalves, L. M. | - |
dc.contributor.author | Marins, Emílio Sérgio | - |
dc.contributor.author | Viseu, T. M. R. | - |
dc.contributor.author | Ferdov, S. | - |
dc.contributor.author | Bourée, J. E. | - |
dc.date.accessioned | 2011-02-14T13:55:05Z | - |
dc.date.available | 2011-02-14T13:55:05Z | - |
dc.date.issued | 2009-04 | - |
dc.identifier.citation | "Thin Solid Films." ISSN 0040-6090. 517:12 (Abr. 2009) 3503-3506. | por |
dc.identifier.issn | 0040-6090 | por |
dc.identifier.uri | https://hdl.handle.net/1822/11748 | - |
dc.description.abstract | Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 Ǻ/s) and at low substrate temperature. Films were deposited using NH3/SiH4 flow rate ratios between 1 and 70 and substrate temperatures of 100º C and 250ºC. For NH3/SiH4 ratios between 40 and 70, highly transparent (T ~ 90%), dense films (2.56 - 2.74 g/cm3) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 Ǻ/s and <0.5 Ǻ/s were obtained for films deposited at 100ºC and 250ºC, respectively. Films deposited at both substrate temperatures showed electrical conductivity ~ 10-14 Ω-1cm-1 and breakdown fields >10 MV cm−1. | por |
dc.description.sponsorship | Fundação para a Ciência e Tecnologia (FCT) - FCT/CNRS programa com o contracto no. 20798, bolsa de investigaçao e projecto PTDC-CTM-66558-2006 | por |
dc.language.iso | eng | por |
dc.publisher | Elsevier 1 | por |
dc.rights | openAccess | por |
dc.subject | Hot-wire CVD | por |
dc.subject | Silicon nitride | por |
dc.subject | Dielectric | por |
dc.subject | Low-temperature deposition | por |
dc.subject | Electronic transport | por |
dc.title | Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC | por |
dc.type | article | por |
dc.peerreviewed | yes | por |
dc.relation.publisherversion | http://www.sciencedirect.com/ | por |
sdum.number | 12 | por |
sdum.pagination | 3503-3506 | por |
sdum.publicationstatus | published | por |
sdum.volume | 517 | por |
oaire.citationStartPage | 3503 | por |
oaire.citationEndPage | 3506 | por |
oaire.citationIssue | 12 | por |
oaire.citationVolume | 517 | por |
dc.identifier.doi | 10.1016/j.tsf.2009.01.077 | por |
dc.subject.wos | Science & Technology | por |
sdum.journal | Thin Solid Films | por |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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HW5-57_rev.pdf | 377,35 kB | Adobe PDF | Ver/Abrir |