Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/65951

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dc.contributor.authorG. S. Santos, Joãopor
dc.contributor.authorCorrea, Marcio A.por
dc.contributor.authorFerreira, Armandopor
dc.contributor.authorR. Carvalho, Brunopor
dc.contributor.authorB. da Silva, Rodolfopor
dc.contributor.authorBohn, Felipepor
dc.contributor.authorLanceros-Méndez, S.por
dc.contributor.authorVaz, F.por
dc.date.accessioned2020-07-10T17:22:28Z-
dc.date.available2020-07-10T17:22:28Z-
dc.date.issued2020-06-29-
dc.identifier.citationG. S. Santos, J.; Correa, M.A.; Ferreira, A.; R. Carvalho, B.; B. da Silva, R.; Bohn, F.; Lanceiros-Méndez, S.; Vaz, F. Magnetic Response Dependence of ZnO Based Thin Films on Ag Doping and Processing Architecture. Materials 2020, 13, 2907.por
dc.identifier.urihttps://hdl.handle.net/1822/65951-
dc.description.abstractMultifunctional and multiresponsive thin films are playing an increasing role in modern technology. This work reports a study on the magnetic properties of ZnO and Ag-doped ZnO semiconducting films prepared with a zigzag-like columnar architecture and their correlation with the processing conditions. The films were grown through Glancing Angle Deposition (GLAD) co-sputtering technique to improve the induced ferromagnetism at room temperature. Structural and morphological characterizations have been performed and correlated with the paramagnetic resonance measurements, which demonstrate the existence of vacancies in both as-cast and annealed films. The magnetic measurements reveal changes in the magnetic order of both ZnO and Ag-doped ZnO films with increasing temperature, showing an evolution from a paramagnetic (at low temperature) to a diamagnetic behavior (at room temperature). Further, the room temperature magnetic properties indicate a ferromagnetic order even for the un-doped ZnO film. The results open new perspectives for the development of multifunctional ZnO semiconductors, the GLAD co-sputtering technique enables the control of the magnetic response, even in the un-doped semiconductor materials.por
dc.description.sponsorshipThe Brazilian agencies CNPq, CAPES partially supports the research. From Portugal side, this work was supported by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding UID/FIS/04650/2020 and the junior research contract (A.F.). Financial support from the Basque Government Industry Department under the ELKARTEK. HAZITEK and PIBA programs is also acknowledged.por
dc.language.isoengpor
dc.publisherMultidisciplinary Digital Publishing Institutepor
dc.relationUID/FIS/04650/2020por
dc.rightsopenAccesspor
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/por
dc.subjectzinc oxidepor
dc.subjectthin filmspor
dc.subjectroom temperature ferromagnetismpor
dc.subjectdopingpor
dc.subjectsilverpor
dc.subjectsputteringpor
dc.titleMagnetic response dependence of ZnO based thin films on Ag doping and processing architecturepor
dc.typearticlepor
dc.peerreviewedyespor
dc.relation.publisherversionhttps://www.mdpi.com/1996-1944/13/13/2907por
oaire.citationStartPage1por
oaire.citationEndPage12por
oaire.citationIssue13por
oaire.citationVolume13por
dc.date.updated2020-07-10T13:37:20Z-
dc.identifier.eissn1996-1944-
dc.identifier.doi10.3390/ma13132907por
dc.subject.wosScience & Technologypor
sdum.journalMaterialspor
oaire.versionVoRpor
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