Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/5161

TitleAb initio modeling of defects in silicon, germanium and SiGe alloys
Author(s)Torres, V. J. B.
Coutinho, J.
Carvalho, A.
Barroso, M.
Almeida, Luís de
Pinto, H.
Ribeiro, R. M.
KeywordsSilicon
Germanium
Modelling
Defects
SiGe
Alloys
Issue date2005
CitationCONFERÊNCIA NACIONAL DA SOCIEDADE PORTUGUESA DE FÍSICA, 2005 – “Física 2005” [S.l. :s.n., 2005].
Abstract(s)Understanding the most elemental defects in semiconductors is a fundamental step to grasp the countless solid-state reactions that may occur during crystal growth, device processing and operation stages. The higher carrier mobilitity in SiGe alloys and germanium, when compared with silicon, and the necessity to a higher K dielectric than SiO2 makes these semiconductors the most contendors to a new generation of electronic devices. Our aim is to model self and impurity point defects in SiGe alloys and germanium, and compare with their equivalent complexes in silicon. We use density functional theory and pseudopotentials to determine the structural, electronic and vibrational properties. The calculations are performed in a 32 CPU PC cluster, in Physics Department of Aveiro University.
TypePoster
URIhttp://hdl.handle.net/1822/5161
AccessOpen access
Appears in Collections:CDF - FMNC - Outros Documentos/Other Documents (without refereeing)

Files in This Item:
File Description SizeFormat 
Presentation-fisica2006-aveiro.pdfPoster apresentado491,5 kBAdobe PDFView/Open

Partilhe no FacebookPartilhe no TwitterPartilhe no DeliciousPartilhe no LinkedInPartilhe no DiggAdicionar ao Google BookmarksPartilhe no MySpacePartilhe no Orkut
Exporte no formato BibTex mendeley Exporte no formato Endnote Adicione ao seu ORCID