Please use this identifier to cite or link to this item: https://hdl.handle.net/1822/4833

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dc.contributor.authorMorais, Raul-
dc.contributor.authorValente, A.-
dc.contributor.authorCouto, Carlos-
dc.contributor.authorCorreia, J. H.-
dc.date.accessioned2006-05-02T15:16:07Z-
dc.date.available2006-05-02T15:16:07Z-
dc.date.issued2003-06-22-
dc.identifier.citationIEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, Rio de Janeiro, Brazil, 2003 – “IEEE International Symposium on Industrial Electronics : ISIE’03 : [proceedings]”. New Piscataway : IEEE, 2003. vol. 2. ISBN 0-7803-7912-8. p. 1-4.eng
dc.identifier.isbn0-7803-7912-8-
dc.identifier.urihttps://hdl.handle.net/1822/4833-
dc.description.abstractThis paper describes a CMOS mixed-signal interface with a RF transmitter. This die is assembled in a Multi-Chip-Module (MCM) micro-system together with the micromachined soil moisture sensor to achieve a cost effective solution with accurate and reliable measurements for soil moisture in agriculture. The soil moisture probe, based on Dual-Probe Heat-Pulse (DPHP) method, is fabricated in bulkmicromachining technology. The DPHP method is based on the measurement of the maximum temperature rise at some distance from the heater, after applying a heat-pulse. The measurement of the temperature rise is obtained by subtracting soil temperature from the probe temperature. The mixed-signal interface is based on a pre-amplification stage and first-order sigma-delta modulator. The bit-stream output of the modulator is then applied to a counter as a first order decimation filter thus providing a 12-bit readout sample. Prior to transmission, data is encoded as a pulse width modulated (PWM) signal and then transmitted by means of an amplitude shift-keying (ASK) modulation. The transmitter features a VCO phase locked to the quartz crystal reference of 13.56 MHz to achieve a carrier frequency of 433.92 MHz. A RF power amplifier based on class E topology was chosen. The CMOS mixed-signal interface with a RF transmitter has been implemented in a single-chip using a standard CMOS process (AMI 0.7 µm, n-well, 2 metals and 1poly).eng
dc.language.isoengeng
dc.publisherIEEEeng
dc.rightsopenAccesseng
dc.subjectWirelesseng
dc.subjectSigma - Deltaeng
dc.subjectSoil-Moisture sensorseng
dc.subjectRF Transmittereng
dc.titleA CMOS mixed-signal interface with a RF transmitter for a micromachined soil moisture sensoreng
dc.typeconferencePapereng
dc.peerreviewedyeseng
Appears in Collections:DEI - Artigos em atas de congressos internacionais

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