Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/43586

TitleUnraveling the resistive switching effect in ZnO/0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 heterostructures
Author(s)Silva, J. P. B.
Vorokhta, M.
Dvořák, F.
Sekhar, K. C.
Matolín, V.
Moreira, J. Agostinho
Pereira, Mário
Gomes, M. J. M.
KeywordsResistive switching
Charge coupling effect
ZnO/0.5BZT-0.5BCT heterojunction
Issue date2017
PublisherElsevier
JournalApplied Surface Science
CitationJ.P.B.Silva, M.Vorokhta, F.Dvorak, K.C.Sekhar, V.Matolın, J.Agostinho Moreira, M.Pereira, M.J.M.Gomes, Unraveling the resistive switching effect in ZnO/0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 heterostructures, Applied Surface Science http://dx.doi.org/10.1016/j.apsusc.2016.12.092
Abstract(s)This work reports the effect of partial oxygen pressure, used in the deposition of the ZnO layer, on the band alignment at ZnO − 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) interface and on the resistive switching (RS) behavior of pulsed laser deposited ZnO/0.5BZT-0.5BCT heterostructures. X-ray photoelectron spectroscopy (XPS) has been employed to measure the valence band offset and the conduction band offset of the ZnO/0.5BZT-0.5BCT heterojunctions. The valence and conduction band offsets of the ZnO/0.5BZT-0.5BCT heterostucture with ZnO deposited at 10−2 mbar of partial oxygen pressure were found to be 0.27 and 0.80 eV, respectively. The RS effect in heterostructures is explained on the base of the charge coupling between the switchable polarization of ferroelectric layer and the non-switchable polarization of semiconductor layer. The heterostructure with ZnO deposited at 10−2 mbar of partial oxygen pressure displays optimum RS characteristics, with a switching ratio ≥ 104 and excellent retention and endurance characteristics. The optimum RS characteristics are attributed to a good interface quality with enough carrier concentration in ZnO, as evidenced by XPS.
TypeArticle
URIhttp://hdl.handle.net/1822/43586
DOI10.1016/j.apsusc.2016.12.092
ISSN0169-4332
Publisher versionhttp://dx.doi.org/10.1016/j.apsusc.2016.12.092
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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