Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/33980

Full metadata record
DC FieldValueLanguage
dc.contributor.authorSilva, J. P. B.por
dc.contributor.authorSekhar, K. C.por
dc.contributor.authorRodrigues, S. A. S.por
dc.contributor.authorPereira, Mário R.por
dc.contributor.authorParisini, A.por
dc.contributor.authorAlves, E.por
dc.contributor.authorBarradas, N. P.por
dc.contributor.authorGomes, M. J. M.por
dc.date.accessioned2015-02-18T15:04:29Z-
dc.date.available2015-02-18T15:04:29Z-
dc.date.issued2013-
dc.identifier.issn0169-4332por
dc.identifier.urihttp://hdl.handle.net/1822/33980-
dc.description.abstractThe thin films of Ba0.8Sr0.2TiO3 (BST) investigated in this work were produced by pulsed laser deposition at different pulse-repetition frequencies (PRFs). First measurements by X-ray diffraction suggested a crystalline nature of the deposited films. However, scanning transmission electron microscopy and transmission electron microscopy images have revealed that a BST amorphous layer of considerable thickness is formed at the interface between the film and the Pt layer in the films deposited at 10 Hz. Moreover, energy-dispersive X-ray spectroscopy shows that the composition of the BST layer is the same in both the amorphous and the crystalline phases whereas Rutherford backscattering spectrometry measurements have revealed a stoichiometry of the films identical to that of the target. A new interpretation is proposed to explain the formation of this amorphous layer, based on the PRF used during the deposition. Finally, measurements of dielectric and electric properties were performed on as-grown and annealed samples. The results of these measurements are explained by a model, where a low-permittivity amorphous layer is connected in series with the crystalline BST layer.por
dc.language.isoengpor
dc.publisherElsevierpor
dc.rightsrestrictedAccesspor
dc.subjectPulsed laser depositionpor
dc.subjectBaTiO3 and titanatespor
dc.subjectDielectric propertiespor
dc.subjectInterfacial amorphous layerpor
dc.subjectBaTiO and titanates 3por
dc.titleOn the formation of an interface amorphous layer in nanostructured ferroelectric Ba0.8Sr0.2TiO3 thin films integrated on Pt-Si and its effect on the electrical propertiespor
dc.typearticlepor
dc.peerreviewedyespor
sdum.publicationstatuspublishedpor
oaire.citationStartPage136por
oaire.citationEndPage141por
oaire.citationTitleApplied Surface Sciencepor
oaire.citationVolume278por
dc.identifier.doi10.1016/j.apsusc.2012.11.161por
dc.subject.wosScience & Technologypor
sdum.journalApplied Surface Sciencepor
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

Files in This Item:
File Description SizeFormat 
On the formation of an interface amorphous layer in nanostructured ferroelectric.pdf
  Restricted access
810,89 kBAdobe PDFView/Open

Partilhe no FacebookPartilhe no TwitterPartilhe no DeliciousPartilhe no LinkedInPartilhe no DiggAdicionar ao Google BookmarksPartilhe no MySpacePartilhe no Orkut
Exporte no formato BibTex mendeley Exporte no formato Endnote Adicione ao seu ORCID