Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/33969

TitleFerroelectric properties of pulsed laser deposited PZT (92/8) thin films
Author(s)Silva, J. P. B.
Rodrigues, S. A. S.
Sekhar, K. C.
Pereira, Mário R.
Gomes, M. J. M.
Issue date2013
PublisherSpringer
JournalJournal of Materials Science: Materials in Electronics
Abstract(s)The effect of pulse amplitude on the ferroelectric and switching properties of pulsed laser deposited PZT (92/8) thin films has been studied. The structural analysis revealed that the films had a well crystallized perovskite phase without secondary phases. The atomic force microscopy has been employed to estimate the grain size and surface roughness of the film. A well-saturated P–E hysteresis loop was observed with average values of remnant polarization (Pr) & 16.0 lC/ cm2 , saturation polarization (Ps) & 21.7 lC/cm2 and coercive field &138 kV/cm. The P–E loops were very stable with frequency, confirming that the contribution of the leakage current and/or mobile free charges to the polarization is minimum. The polarization current exhibits the exponential dependence on the pulse amplitude and the leakage current seems to be governed by the hopping mechanism which is generally associated to structural defects.
TypeArticle
URIhttp://hdl.handle.net/1822/33969
DOI10.1007/s10854-013-1529-z
ISSN0957-4522
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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