Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/27344

TitleThe effect of argon plasma treatment on the permeation barrier properties of silicon nitride layers
Author(s)Majee, Subimal
Cerqueira, M. F.
Tondelier, D.
Geffroy, B.
Bonnassieux, Y.
Alpuim, P.
Bourée, J. E.
KeywordsSilicon nitride
Ar plasma treatment
Permeation barrier
HW-CVD
Issue date3-Aug-2013
PublisherElsevier
JournalSurface and Coatings Technology
Abstract(s)In this work we produce and study silicon nitride (SiNx) thin films deposited by Hot Wire Chemical Vapor Depo- sition (HW-CVD) to be used as encapsulation barriers for flexible organic photovoltaic cells fabricated on poly- ethylene terephthalate (PET) substrates in order to increase their shelf lifetime. We report on the results of SiNx double-layers and on the equivalent double-layer stack where an Ar-plasma surface treatment was performed on the first SiNx layer. The Ar-plasma treatment may under certain conditions influences the structure of the interface between the two subsequent layers and thus the barrier properties of the whole system. We focus our attention on the effect of plasma treatment time on the final barrier properties. We assess the encapsulation barrier properties of these layers, using the calcium degradation test where changes in the electrical conductance of encapsulated Ca sensors are monitored with time. The water vapor transmission rate (WVTR) is found to be ~3 × 10−3 g/m2·day for stacked SiNx double-layer with 8 min Ar plasma surface treatment.
TypeArticle
URIhttp://hdl.handle.net/1822/27344
DOI10.1016/j.surfcoat.2013.07.067
ISSN0257-8972
Publisher versionwww.elsevier.com/locate/surfcoat
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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