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https://hdl.handle.net/1822/27167
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Campo DC | Valor | Idioma |
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dc.contributor.author | Cristea, D. | - |
dc.contributor.author | Crisan, A. | - |
dc.contributor.author | Barradas, N. P. | - |
dc.contributor.author | Alves, E. | - |
dc.contributor.author | Costa, P. | - |
dc.contributor.author | Lanceros-Méndez, S. | - |
dc.contributor.author | Cunha, L. | - |
dc.date.accessioned | 2013-12-18T15:13:09Z | - |
dc.date.available | 2013-12-18T15:13:09Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | Metalurgia International vol. XVIII (2013) Special Issue no. 6 | por |
dc.identifier.issn | 1582-2214 | por |
dc.identifier.uri | https://hdl.handle.net/1822/27167 | - |
dc.description.abstract | Tantalum oxynitride thin films were deposited by reactive magnetron sputtering in a N2+O2 (85%+15%) atmosphere, with increasing total reactive gas flows. The chemical composition was determined by RBS and the structural development by XRD. The electrical resistivity was measured using the 2-point and 4-point probe techniques. The photocatalytic behavior was determined on glass samples in UV, using methylene-blue as a pollutant. It was observed that, depending on the deposition process parameters, the samples can be divided into 4 zones, each with a characteristic structure and subsequent behavior. The samples from zone I can be attributed to the β-Ta phase, metallic, conductive. The samples from zone II can be attributed to a fcc Ta(O, N) structure, with N/Ta higher than O/Ta, with increasing electrical resistivity. The samples from zone III are oxide-like, amorphous, electrically insulating. | por |
dc.description.sponsorship | FEDER through the COMPETE Program and by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Project PEST-C/FIS/UI607/2011 | por |
dc.description.sponsorship | Sectoral Operation Programme Human Resources Development (SOP HRD), ID76945 financed from the European Social Fund and by the Romanian Government. | por |
dc.language.iso | eng | por |
dc.publisher | Editura Stiintifica FMR | por |
dc.rights | restrictedAccess | por |
dc.subject | Tantalum oxynitride | por |
dc.subject | Sputtering | por |
dc.subject | Thin films | por |
dc.title | Electrical and photocatalytic behaviour of TAOxNy magnetron sputtered thin solid films | por |
dc.type | article | por |
dc.peerreviewed | yes | por |
sdum.publicationstatus | published | por |
oaire.citationStartPage | 61 | por |
oaire.citationEndPage | 64 | por |
oaire.citationIssue | Special Issue 6 | por |
oaire.citationTitle | Metalurgia International | por |
oaire.citationVolume | XVIII | por |
dc.subject.wos | Science & Technology | por |
sdum.journal | Metalurgia International | por |
Aparece nas coleções: | CDF - GRF - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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TaON photocatalytic MI 2013.pdf Acesso restrito! | versão pré-final | 252,22 kB | Adobe PDF | Ver/Abrir |