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TitleTuneable properties of aluminium oxynitride thin films
Author(s)Borges, Joel Nuno Pinto
Barradas, Nuno P.
Alves, Eduardo
Martin, Nicolas
Beaufort, Marie France
Camelio, Sophie
Eyidi, Dominique
Girardeau, Thierry
Paumier, Fabien
Rivière, J. P.
Vaz, F.
Marques, L.
KeywordsReactive DC magnetron sputtering
Thin films
Target potential
Deposition rate
Grain size
Percolating network
Electrical and optical properties
Refractive index
Extinction coefficient
Electrical resistivity
Temperature coefficient of resistance (TCR)
Broadband absorption
Issue dateApr-2013
PublisherBentham Science Publishers
Abstract(s)In this subchapter is discussed some characteristics and properties of AlOxNy thin films produced by reactive DC magnetron sputtering. The films were deposited using Ar as working gas and a reactive gas mixture of N2+O2 (17:3). The reactive gas flow was varied in order to produce a wide range of chemical compositions. Sub-stoichiometric AlOxNy films, with CO+N/CAl atomic ratios up to 0.85 were produced, with Al-type crystalline structure. Transmission electron microscopy (TEM) analysis and X-ray photoelectron spectroscopy (XPS) spectra suggests that the films are a percolating network, composed by aluminium nanocrystals with different shapes and sizes embedded in an oxide/nitride matrix. The particular composition, structure and morphology of the films results in very different electrical properties, which can be explained using a tunnel barrier conduction mechanism for the electric charge transport, as well as distinct optical responses, such as an unusual large broadband absorption for some films.
TypeBook part
Publisher version
AccessRestricted access (UMinho)
Appears in Collections:CDF - FCT - Artigos/Papers (with refereeing)

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