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|Title:||Tuneable properties of aluminium oxynitride thin films|
|Author(s):||Borges, Joel Nuno Pinto|
Barradas, Nuno P.
Beaufort, Marie France
Rivière, J. P.
|Keywords:||Reactive DC magnetron sputtering|
Electrical and optical properties
Temperature coefficient of resistance (TCR)
|Publisher:||Bentham Science Publishers|
|Abstract(s):||In this subchapter is discussed some characteristics and properties of AlOxNy thin films produced by reactive DC magnetron sputtering. The films were deposited using Ar as working gas and a reactive gas mixture of N2+O2 (17:3). The reactive gas flow was varied in order to produce a wide range of chemical compositions. Sub-stoichiometric AlOxNy films, with CO+N/CAl atomic ratios up to 0.85 were produced, with Al-type crystalline structure. Transmission electron microscopy (TEM) analysis and X-ray photoelectron spectroscopy (XPS) spectra suggests that the films are a percolating network, composed by aluminium nanocrystals with different shapes and sizes embedded in an oxide/nitride matrix. The particular composition, structure and morphology of the films results in very different electrical properties, which can be explained using a tunnel barrier conduction mechanism for the electric charge transport, as well as distinct optical responses, such as an unusual large broadband absorption for some films.|
|Access:||Restricted access (UMinho)|
|Appears in Collections:||CDF - FCT - Artigos/Papers (with refereeing)|
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