Carrier storage in Ge nanoparticles produced by pulsed laser deposition

Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/18853

Título:	Carrier storage in Ge nanoparticles produced by pulsed laser deposition
Autor(es):	Martín-Sánchez, J. Chahboun, A. Gomes, M. J. M. Rolo, Anabela G. Pivac, B. Capan, I.
Palavras-chave:	Germanium Nanoparticles Pulsed laser deposition Charge trapping
Data:	12-Abr-2012
Editora:	Wiley
Revista:	physica status solidi (RRL) - Rapid Research Letters
Resumo(s):	In this work, we report on the electrical characterization of Ge nanoparticles (NPs) produced by pulsed laser deposition (PLD) at room temperature (RT) in Ar gas inert atmosphere using a shadowed off-axis deposition geometry. Our results show that functional thin films of crystalline Ge NPs embedded between thin alumina films can be obtained on p-type Si(100) substrates following a low temperature and short rapid thermal annealing (RTA) treatment. Metal–oxide–semiconductor (MOS) structures with and without Ge NPs embedded in the alumina were prepared for the electrical measurements. The results indicate a strong memory effect at relatively low programming voltages (±4 V) due to the presence of Ge NPs.
Tipo:	Artigo
URI:	https://hdl.handle.net/1822/18853
DOI:	10.1002/pssr.201206104
ISSN:	1862-6270
Versão da editora:	http://onlinelibrary.wiley.com/
Arbitragem científica:	yes
Acesso:	Acesso restrito UMinho
Aparece nas coleções:	CDF - CEP - Artigos/Papers (with refereeing) CDF - FMNC - Artigos/Papers (with refereeing)