Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/14310

TitleInfluence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix
Author(s)Vieira, E. M. F.
Pinto, S. R. C.
Levichev, S.
Rolo, Anabela G.
Chahboun, A.
Buljan, M.
Barradas, N. P.
Alves, E.
Bernstorff, S.
Conde, O.
Gomes, M. J. M.
KeywordsSemiconductors
Magnetron sputtering
Si1-xGex nanocrystals
Mullite
GIXRD
Raman scattering
GISAXS
Si Ge nanocrystals 1-x x
Issue date2011
PublisherElsevier
JournalMicroelectronic Engineering
Abstract(s)Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF magnetron sputtering technique with following annealing procedure at 800 C, in nitrogen atmosphere. The presence of Si1-xGex NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS) and Raman spectroscopy. The influence of the growth conditions on the structural properties and composition of Si1-xGex NCs inside the alumina matrix was analyzed. Optimal conditions to grow Si1-xGex (x~0.8) NCs sized between 3 and 4 nm in Al2O3 matrix were established.
TypeArticle
URIhttp://hdl.handle.net/1822/14310
DOI10.1016/j.mee.2010.10.016
ISSN0167-9317
Publisher versionhttp://linkinghub.elsevier.com/retrieve/pii/S016793171000376X
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FCT - Artigos/Papers (with refereeing)
CDF - FMNC - Artigos/Papers (with refereeing)

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