Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/13990
Título: | Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films |
Autor(es): | Losurdo, M. Cerqueira, M. F. Stepikhova, M. Alves, E. Giangregorio, M. M. Pinto, P. Ferreira, J. A. |
Palavras-chave: | Spectroscopic ellipsometry Nanocrystalline silicon Erbium |
Data: | 2001 |
Editora: | Elsevier 1 |
Revista: | Physica B: Condensed Matter |
Resumo(s): | Er doped nc-Si thin films have been investigated by spectroscopic ellipsometry (SE). The optical response of Er ions in a nc-Si/SiO matrix has been determined by SE, and it has been used to detect Er contents as low as 0.2 at%. The complex layered nanostructure of nc-Si:Er:O has been resolved and it has been found that it is strongly influenced by the Er-doping and the oxygen in-depth distribution profile. SE results are discussed in comparison with data obtained by the standard methods of the X-ray diffraction, Rutherford backscattering and Raman spectroscopy. |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/13990 |
DOI: | 10.1016/S0921-4526(01)00704-9 |
ISSN: | 0921-4526 |
Versão da editora: | http://www.sciencedirect.com/science/article/pii/S0921452601007049 |
Arbitragem científica: | yes |
Acesso: | Acesso aberto |
Aparece nas coleções: | CDF - FMNC - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
---|---|---|---|---|
SELS-SiEr-PB2001.pdf | Documento principal | 503,85 kB | Adobe PDF | Ver/Abrir |