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TitleSpectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films
Author(s)Losurdo, M.
Cerqueira, M. F.
Stepikhova, M.
Alves, E.
Giangregorio, M. M.
Pinto, P.
Ferreira, J. A.
KeywordsSpectroscopic ellipsometry
Nanocrystalline silicon
Issue date2001
JournalPhysica B: Condensed Matter
Abstract(s)Er doped nc-Si thin films have been investigated by spectroscopic ellipsometry (SE). The optical response of Er ions in a nc-Si/SiO matrix has been determined by SE, and it has been used to detect Er contents as low as 0.2 at%. The complex layered nanostructure of nc-Si:Er:O has been resolved and it has been found that it is strongly influenced by the Er-doping and the oxygen in-depth distribution profile. SE results are discussed in comparison with data obtained by the standard methods of the X-ray diffraction, Rutherford backscattering and Raman spectroscopy.
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Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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