Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13990

TitleSpectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films
Author(s)Losurdo, M.
Cerqueira, M. F.
Stepikhova, M.
Alves, E.
Giangregorio, M. M.
Pinto, P.
Ferreira, J. A.
KeywordsSpectroscopic ellipsometry
Nanocrystalline silicon
Erbium
Issue date2001
PublisherElsevier
JournalPhysica B: Condensed Matter
Abstract(s)Er doped nc-Si thin films have been investigated by spectroscopic ellipsometry (SE). The optical response of Er ions in a nc-Si/SiO matrix has been determined by SE, and it has been used to detect Er contents as low as 0.2 at%. The complex layered nanostructure of nc-Si:Er:O has been resolved and it has been found that it is strongly influenced by the Er-doping and the oxygen in-depth distribution profile. SE results are discussed in comparison with data obtained by the standard methods of the X-ray diffraction, Rutherford backscattering and Raman spectroscopy.
Typearticle
URIhttp://hdl.handle.net/1822/13990
DOI10.1016/S0921-4526(01)00704-9
ISSN0921-4526
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S0921452601007049
Peer-Reviewedyes
AccessopenAccess
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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