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|Title:||Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films|
Cerqueira, M. F.
Giangregorio, M. M.
Ferreira, J. A.
|Journal:||Physica B: Condensed Matter|
|Abstract(s):||Er doped nc-Si thin films have been investigated by spectroscopic ellipsometry (SE). The optical response of Er ions in a nc-Si/SiO matrix has been determined by SE, and it has been used to detect Er contents as low as 0.2 at%. The complex layered nanostructure of nc-Si:Er:O has been resolved and it has been found that it is strongly influenced by the Er-doping and the oxygen in-depth distribution profile. SE results are discussed in comparison with data obtained by the standard methods of the X-ray diffraction, Rutherford backscattering and Raman spectroscopy.|
|Appears in Collections:||CDF - FMNC - Artigos/Papers (with refereeing)|
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