Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13952

TitleVisible and near IR photoluminescent response of nc-Si: er thin films produced by rf sputtering
Author(s)Cerqueira, M. F.
Monteiro, T.
Stepikhova, M.
Losurdo, M.
Soares, M. J.
Gomes, I. Tarroso
KeywordsVisible PL
IR PL
Er doping
Nanocrystalline silicon
Issue date2004
PublisherIOP Publishing
JournalNanotechnology
Abstract(s)In this contribution we present the Visible and near IR photoluminescence (PL) analysis of Er doped nanocrystalline silicon thin films produced by rf magnetron sputtering method. Efficient photoluminescence was observed in these structures in both visible and 1.54µm wavelength regions. We show the strong influence of the presence of nanocrystalline fraction in films on their luminescence efficiency at 1.54 μm that has been studied on the series of specially prepared samples with the different crystallinity, i.e. percentage and sizes of Si nanocrystals. The mechanism involved in the visible photoluminescence of highly a crystalline nc-Si:H consisting of about 7 nm silicon nanocrystals embedded in an amorphous matrix is discussed.
TypeArticle
URIhttp://hdl.handle.net/1822/13952
DOI10.1088/0957-4484/15/7/015
ISSN0957-4484
Publisher versionhttp://iopscience.iop.org/0957-4484/15/7/015/pdf/0957-4484_15_7_015.pdf
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)
CDF - FMNC - Artigos/Papers (with refereeing)

Files in This Item:
File Description SizeFormat 
VisIRPL-SiEr-N2004.pdfDocumento principal473,9 kBAdobe PDFView/Open

Partilhe no FacebookPartilhe no TwitterPartilhe no DeliciousPartilhe no LinkedInPartilhe no DiggAdicionar ao Google BookmarksPartilhe no MySpacePartilhe no Orkut
Exporte no formato BibTex mendeley Exporte no formato Endnote Adicione ao seu ORCID