Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/13773

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dc.contributor.authorCerqueira, M. F.-
dc.contributor.authorLosurdo, M.-
dc.contributor.authorStepikhova, M.-
dc.contributor.authorAlpuim, P.-
dc.contributor.authorAndrês, G.-
dc.contributor.authorKozanecki, A.-
dc.contributor.authorSoares, Manuel Jorge-
dc.contributor.authorPeres, M.-
dc.date.accessioned2011-10-04T17:12:24Z-
dc.date.available2011-10-04T17:12:24Z-
dc.date.issued2009-
dc.identifier.issn0040-6090por
dc.identifier.urihttps://hdl.handle.net/1822/13773-
dc.description.abstractErbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to deposit films with different crystalline fraction and crystallite size. Photoluminescence measurements revealed a correlation between film microstructure and the Er3+ photoluminescence efficiency.por
dc.description.sponsorshipFCT Project POCTI/CTM/39395/2001por
dc.description.sponsorshipINTAS Project #03-51-6486por
dc.language.isoengpor
dc.publisherElsevier 1por
dc.relationinfo:eu-repo/grantAgreement/FCT/POCI/39395/PT-
dc.rightsopenAccesspor
dc.subjectErbiumpor
dc.subjectNanocrystalline siliconpor
dc.subjectPhotoluminescencepor
dc.titlePhotoluminescence of nc-Si:Er thin films obtained by physical and chemical vapour deposition techniques: The effects os microstructure and chemical compositionpor
dc.typearticlepor
dc.peerreviewedyespor
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0040609009004441por
sdum.publicationstatuspublishedpor
oaire.citationStartPage5808por
oaire.citationEndPage5812por
oaire.citationIssue20por
oaire.citationTitleThin Solid Filmspor
oaire.citationVolume517por
dc.identifier.doi10.1016/j.tsf.2009.02.146por
dc.subject.wosScience & Technologypor
sdum.journalThin Solid Filmspor
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