Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/13752

TítuloCrystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering
Autor(es)Cerqueira, M. F.
Stepikhova, M.
Kozanecki, A.
Andrês, G.
Alves, E.
Palavras-chaveNanocrystalline silicon
Erbium doping
Erbium emission
Data2010
EditoraAmerican Scientific Publishers
RevistaJournal of Nanoscience and Nanotechnology
Resumo(s)Erbium-doped low-dimensional Si films with different microstructures were grown by reactive magnetron sputtering on glass substrates by varying the deposition parameters. Their structure and chemical composition were studied by micro-Raman and Rutherford backscattering spectrometry, respectively. In this contribution the Erbium emission is studied as a function of nanocrystalline fraction and average crystal sizes and also as a function of the matrix chemical composition. We discuss the temperature dependence of the Er3+ emission as well as the possible explanations of the low Er active fraction.
TipoArtigo
URIhttps://hdl.handle.net/1822/13752
DOI10.1166/jnn.2010.1380
ISSN1533-4880
Versão da editorahttp://www.ingentaconnect.com/content/asp/jnn/2010/00000010/00000004/art00060
Arbitragem científicayes
AcessoAcesso aberto
Aparece nas coleções:CDF - CEP - Artigos/Papers (with refereeing)

Ficheiros deste registo:
Ficheiro Descrição TamanhoFormato 
EE-Si-JNN2010.pdfDocumento principal318,89 kBAdobe PDFVer/Abrir

Partilhe no FacebookPartilhe no TwitterPartilhe no DeliciousPartilhe no LinkedInPartilhe no DiggAdicionar ao Google BookmarksPartilhe no MySpacePartilhe no Orkut
Exporte no formato BibTex mendeley Exporte no formato Endnote Adicione ao seu ORCID