Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13752

TitleCrystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering
Author(s)Cerqueira, M. F.
Stepikhova, M.
Kozanecki, A.
Andrês, G.
Alves, E.
KeywordsNanocrystalline silicon
Erbium doping
Erbium emission
Issue date2010
PublisherAmerican Scientific Publishers
JournalJournal of Nanoscience and Nanotechnology
Abstract(s)Erbium-doped low-dimensional Si films with different microstructures were grown by reactive magnetron sputtering on glass substrates by varying the deposition parameters. Their structure and chemical composition were studied by micro-Raman and Rutherford backscattering spectrometry, respectively. In this contribution the Erbium emission is studied as a function of nanocrystalline fraction and average crystal sizes and also as a function of the matrix chemical composition. We discuss the temperature dependence of the Er3+ emission as well as the possible explanations of the low Er active fraction.
TypeArticle
URIhttp://hdl.handle.net/1822/13752
DOI10.1166/jnn.2010.1380
ISSN1533-4880
Publisher versionhttp://www.ingentaconnect.com/content/asp/jnn/2010/00000010/00000004/art00060
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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