Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13721

TitleRaman study of doped-ZnO thin films grown by rf sputtering
Author(s)Cerqueira, M. F.
Rolo, Anabela G.
Viseu, T. M. R.
Campos, J. Ayres de
Arôso, T. de Lacerda
Oliveira, Fernando
Vasilevskiy, Mikhail
Alves, E.
KeywordsZnO
Doping
Raman scattering
Phonons
magnetron sputtering
Issue date2010
PublisherWiley
Journalphysica status solidi (c)
Abstract(s)A Raman spectroscopy study of doped versus undoped ZnO layers is presented. The layers were grown by RF magnetron sputtering and the doping with Al, Sb and Mn was achieved by ion implantation with subsequent annealing. First-order Raman response measured under λ=488 nm excitation is discussed. It is shown that doping with any of the impurities used in this work produces a strong enhancement of the longitudinal optical (LO) phonon band, which is attributed to the intra-band Fröhlich mechanism. In addition, doping with Mn results in an extra mode located at 530 cm-1, tentatively attributed to a local vibrational mode of Mn substituting Zn in the lattice sites.
TypeConference paper
URIhttp://hdl.handle.net/1822/13721
DOI10.1002/pssc.200983747
ISSN1862-6351
Publisher versionhttp://onlinelibrary.wiley.com/doi/10.1002/pssc.200983747/abstract
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)
CDF - FMNC - Artigos/Papers (with refereeing)

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