Raman study of doped-ZnO thin films grown by rf sputtering

Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/13721

Título:	Raman study of doped-ZnO thin films grown by rf sputtering
Autor(es):	Cerqueira, M. F. Rolo, Anabela G. Viseu, T. M. R. Campos, J. Ayres de Arôso, T. de Lacerda Oliveira, Fernando Vasilevskiy, Mikhail Alves, E.
Palavras-chave:	ZnO Doping Raman scattering Phonons magnetron sputtering
Data:	2010
Editora:	Wiley
Revista:	physica status solidi (c)
Resumo(s):	A Raman spectroscopy study of doped versus undoped ZnO layers is presented. The layers were grown by RF magnetron sputtering and the doping with Al, Sb and Mn was achieved by ion implantation with subsequent annealing. First-order Raman response measured under λ=488 nm excitation is discussed. It is shown that doping with any of the impurities used in this work produces a strong enhancement of the longitudinal optical (LO) phonon band, which is attributed to the intra-band Fröhlich mechanism. In addition, doping with Mn results in an extra mode located at 530 cm-1, tentatively attributed to a local vibrational mode of Mn substituting Zn in the lattice sites.
Tipo:	Artigo em ata de conferência
URI:	https://hdl.handle.net/1822/13721
DOI:	10.1002/pssc.200983747
ISSN:	1862-6351
Versão da editora:	http://onlinelibrary.wiley.com/doi/10.1002/pssc.200983747/abstract
Arbitragem científica:	yes
Acesso:	Acesso aberto
Aparece nas coleções:	CDF - CEP - Artigos/Papers (with refereeing) CDF - FMNC - Artigos/Papers (with refereeing)