Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/91181
Título: | Variational calculation of the lowest exciton states in phosphorene and transition metal dichalcogenides |
Autor(es): | Gomes, José Nuno Santos Trallero-Giner, Carlos Vasilevskiy, Mikhail |
Palavras-chave: | Exciton Phosphorene Transition-metal dichalcogenide Few-layer material |
Data: | 2021 |
Editora: | IOP Publishing |
Revista: | Journal of Physics: Condensed Matter |
Resumo(s): | Several transition metal dichalcogenides (TMDs) can be exfoliated to produce nearly two-dimensional (2D) semiconductor layers supporting robust excitons with non-hydrogenic Rydberg series of states. Black phosphorus (BP) can also be layered to create a nearly 2D material with interesting properties including its pronounced in-plane anisotropy that influences, in particular, exciton states making them different from those in other 2D semiconductors. We apply the Rayleigh-Ritz variational method to evaluate the energies and approximate the wavefunctions of the ground and lowest excited states of the exciton in a 2D semiconductor with anisotropic effective masses of electrons and holes. The electron-hole interaction is described by the Rytova-Keldysh potential, which is considered beyond the standard zero-thickness approximation. The exciton binding energies calculated for BP and TMD (molybdenum disulphide and tungsten disulphide) monolayers are compared with previously published data. |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/91181 |
DOI: | 10.1088/1361-648X/ac1765 |
ISSN: | 1361-648X |
Versão da editora: | https://doi.org/10.1088/1361-648x/ac1765 |
Arbitragem científica: | yes |
Acesso: | Acesso aberto |
Aparece nas coleções: | PHYSICS OF QUANTUM MATERIALS AND BIONANOSTRUCTURES (2018 - ...) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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jpcm_34_4_045702_2021_Variational method for exciton in phosphorene.pdf | published | 1,4 MB | Adobe PDF | Ver/Abrir |