Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/81350
Registo completo
Campo DC | Valor | Idioma |
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dc.contributor.author | Sompalle, Balaji | por |
dc.contributor.author | Liao, Chun-Da | por |
dc.contributor.author | Wei, Bin | por |
dc.contributor.author | Cerqueira, Maria de Fátima | por |
dc.contributor.author | Nicoara, Nicoleta | por |
dc.contributor.author | Wang, Zhongchang | por |
dc.contributor.author | Sadewasser, Sascha | por |
dc.contributor.author | Alpuim, P. | por |
dc.date.accessioned | 2022-12-22T11:49:36Z | - |
dc.date.issued | 2021-07-01 | - |
dc.identifier.citation | Sompalle, B., Liao, C.-D., Wei, B., Cerqueira, M. de F., Nicoara, N., Wang, Z., … Alpuim, P. (2021, July). Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride. Journal of Vacuum Science & Technology A. American Vacuum Society. http://doi.org/10.1116/6.0000987 | por |
dc.identifier.issn | 0734-2101 | por |
dc.identifier.uri | https://hdl.handle.net/1822/81350 | - |
dc.description.abstract | Hexagonal boron nitride (h-BN) is a critical 2D insulator used as a substrate, gate dielectric, or encapsulation layer for graphene and other 2D materials and their van der Waals heterostructures. It is also promising as an active layer in single-photon emitters and other photonic devices. With the chemical formula H3N-BH3, ammonia borane is the most attractive precursor for up-scalable growth of large-area h-BN, using chemical vapor deposition given its stoichiometric B:N ratio, high stability under ambient conditions, nontoxicity, and high solubility in common solvents. Here, the synthesis of large-area (100 × 150 mm2) crystalline hexagonal boron nitride layers by thermal activation and decomposition of the precursor ammonia borane is presented. We describe two different reaction pathways for h-BN synthesis, providing evidence for dissimilarities in the sublimation kinetics of ammonia borane and how these differences critically influence the growth of h-BN. This understanding helps us accelerate h-BN production, reuse precursors, and reduce machine runtime, paving the way for upscalability. Moreover, our work provides a consistent unified view explaining the diverse deposition conditions reported in the literature for h-BN grown by CVD using ammonia borane as a precursor. | por |
dc.description.sponsorship | This work was supported by National Funds through the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding No. UIDB/04650/2020 and Project Nos. PTDC/FIS-NAN/3668/2014 (LA2D) and PTDC/FIS-MAC/28114/2017 (POCI-01-0145-FEDER-028114) (GRAPHSENS). | por |
dc.language.iso | eng | por |
dc.publisher | American Institute of Physics | por |
dc.relation | info:eu-repo/grantAgreement/FCT/9471 - RIDTI/PTDC%2FFIS-NAN%2F3668%2F2014/PT | por |
dc.relation | info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F04650%2F2020/PT | por |
dc.relation | info:eu-repo/grantAgreement/FCT/9471 - RIDTI/PTDC%2FFIS-MAC%2F28114%2F2017/PT | por |
dc.rights | openAccess | por |
dc.title | Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride | por |
dc.type | article | por |
dc.peerreviewed | yes | por |
dc.relation.publisherversion | https://avs.scitation.org/doi/10.1116/6.0000987 | por |
oaire.citationIssue | 4 | por |
oaire.citationVolume | 39 | por |
dc.identifier.doi | 10.1116/6.0000987 | por |
dc.date.embargo | 10000-01-01 | - |
dc.subject.fos | Engenharia e Tecnologia::Nanotecnologia | por |
dc.subject.wos | Science & Technology | por |
sdum.journal | Journal of Vacuum Science & Technology A | por |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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JVA21-AR-00001.pdf | Author’s peer reviewed accepted manuscript | 1,43 MB | Adobe PDF | Ver/Abrir |