Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/68468
Título: | Semiconductor/relaxor 0–3 type composites: a novel strategy for energy storage capacitors |
Autor(es): | Jayakrishnan, A. R. Silva, José Pedro Basto Kamakshi, K. Annapureddy, V. Mercioniu, I. F. Sekhar, K. C. |
Palavras-chave: | Semiconductor/relaxor 0e3 type composites Relaxor ferroelectrics Energy storage capacitors Lead-free ferroelectric ceramics Semiconductor/relaxor 0–3 type composites |
Data: | 2021 |
Editora: | Elsevier 1 |
Revista: | Journal of Science: Advanced Materials and Devices |
Resumo(s): | In this work, we report a novel strategy to enhance the dielectric breakdown strength and the energy storage performance of lead-free relaxor ferroelectric ceramics through the fabrication of semiconductor/ relaxor 0e3 type composites based on 0.6Ba(Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3 [BZCT] and ZnO. X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM) measurements confirm the formation of semiconductor/relaxor 0e3 type composites, in which ZnO particles are randomly distributed at the grain boundaries of BZCT. Further, the XRD analysis suggests a structural phase change from a tetragonal to a pseudocubic phase as the ZnO content increases from 0 to 5 wt. % in BZCT/ZnO composites. The pseudocubic phase favors the relaxor behavior of the composites as is evident from dielectric studies. The polarization-electric field (P-E) loops reveal the ferroelectric nature of the BZCT/ ZnO composites. The energy storage properties of BZCT/ZnO composite ceramics as a function of different wt. % of ZnO are found to be optimum at 1 wt. % with a recoverable energy density of 2.61 J/cm3 and an efficiency of 74.2%, at an electric field of 282 kV/cm. Besides, an enhancement of 166% in the electric breakdown and 220% in the recoverable energy density was achieved compared to the BZCT ceramics due to the improved density and the large value of DP ¼ Pm - Pr (25.55 mC/cm2 ). Therefore, this work evidences that the formation of semiconductor/relaxor 0e3 type composites can be an effective way to significantly improve the energy storage performance of lead-free relaxor ferroelectric ceramics. |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/68468 |
DOI: | 10.1016/j.jsamd.2020.09.012 |
ISSN: | 2468-2179 |
Versão da editora: | https://www.sciencedirect.com/science/article/pii/S2468217920300861#! |
Arbitragem científica: | yes |
Acesso: | Acesso restrito UMinho |
Aparece nas coleções: | CDF - FMNC - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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1-s2.0-S2468217920300861-main (2).pdf Acesso restrito! | 3,12 MB | Adobe PDF | Ver/Abrir |