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dc.contributor.authorArunmozhi, G.-
dc.contributor.authorLanceros-Méndez, S.-
dc.contributor.authorGomes, E. Matos-
dc.date.accessioned2005-12-14T11:18:37Z-
dc.date.available2005-12-14T11:18:37Z-
dc.date.issued2000-06-
dc.identifier.citation"Materials Letters". ISSN 0167-577X. 44:3/4 (2000) 237-241.eng
dc.identifier.issn0167-577Xeng
dc.identifier.urihttps://hdl.handle.net/1822/3629-
dc.description.abstractLow frequency dielectric measurements in triglycine sulpho-phosphate (TGSP) and gamma-irradiated TGSP crystals were carried out around the ferroelectric to paraelectric phase transition. The dispersion found in the ferroelectric phase cannot be explained only by a Debye equation with a single relaxation time. The ratio of the Curie constants in the para- and ferroelectric phase (C-p/C-f) for the irradiated TGSP samples show that the crystal is partially clamped. The deviations from the typical single relaxation behaviour are more pronounced in irradiated samples clearly indicating the contribution of defects in addition to the impurities to the dynamics of the systemeng
dc.language.isoengeng
dc.publisherElsevier Scienceeng
dc.rightsopenAccesseng
dc.subjectFerroelectriceng
dc.subjectTriglycine sulpho - phosphateeng
dc.subjectDielectric dispersioneng
dc.subjectPhosphoric-acideng
dc.subjectPyroelectriceng
dc.subjectTGS familyeng
dc.titleDielectric relaxation in pure and irradiated TGSP crystalseng
dc.typearticlepor
dc.peerreviewedyeseng
dc.relation.publisherversionhttp://www.elsevier.com/wps/find/journaldescription.cws_home/505672/description#descriptioneng
dc.relation.publisherversionhttp://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TX9-40FGC65-R-G&_cdi=5585&_user=2459786&_orig=search&_coverDate=06%2F30%2F2000&_sk=999559996&view=c&wchp=dGLbVtz-zSkzV&md5=dfd8561c67e493a265fc8037a3793934&ie=/sdarticle.pdf-
sdum.number3-4eng
sdum.pagination237-241eng
sdum.publicationstatuspublishedeng
sdum.volume44eng
oaire.citationStartPage237por
oaire.citationEndPage241por
oaire.citationIssue3-4por
oaire.citationVolume44por
dc.identifier.doi10.1016/S0167-577X(00)00035-5por
dc.subject.wosScience & Technologypor
sdum.journalMaterials Letterspor
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