Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/33983
Título: | Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures |
Autor(es): | Sekhar, K. C. Silva, J. P. B. Kamakshi, Koppole Pereira, Mário Gomes, M. J. M. |
Data: | 2013 |
Editora: | American Institute of Physics |
Revista: | Applied Physics Letters |
Resumo(s): | This work reports the impact of ZnO layer thickness on optical and resistive switching behavior of BaTiO3/ZnO heterostructures grown by pulsed laser deposition. The interface polarization coupling becomes more efficient and causes a remarkable change in heterostructure properties with decrease in ZnO layer thickness. The heterostructure with ZnO thickness of 25 nm displays the enhanced resistive switching characteristics with switching ratio ≈106 and good stability in low and high resistance states. Moreover, the photoluminescence spectrum exhibits two additional blue emissions when ZnO thickness is ≤50 nm and their mechanism is highlighted based on interface band offset and interface polarization coupling effect. |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/33983 |
DOI: | 10.1063/1.4809531 |
ISSN: | 0003-6951 |
Arbitragem científica: | yes |
Acesso: | Acesso restrito UMinho |
Aparece nas coleções: | CDF - FMNC - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3-ZnO heterostructures.pdf Acesso restrito! | 1,02 MB | Adobe PDF | Ver/Abrir |