Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/21512| Título: | Field-effect tunneling transistor based on vertical graphene heterostructures |
| Autor(es): | Britnell, L. Gorbachev, R. V. Jalil, R. Belle, B. D. Schedin, F. Katsnelson, M. I. Eaves, L. Morozov, S. V. Peres, N. M. R. Leist, J. Geim, A. K. Novoselov, K. S. Ponomarenko, L. A. |
| Palavras-chave: | Graphene |
| Data: | Fev-2012 |
| Editora: | American Association for the Advancement of Science |
| Revista: | Science |
| Resumo(s): | We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration. |
| Tipo: | Artigo |
| URI: | https://hdl.handle.net/1822/21512 |
| DOI: | 10.1126/science.1218461 |
| ISSN: | 0036-8075 |
| Arbitragem científica: | yes |
| Acesso: | Acesso aberto |
| Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
| Ficheiro | Descrição | Tamanho | Formato | |
|---|---|---|---|---|
| 1112.4999_Science.pdf | 509,11 kB | Adobe PDF | Ver/Abrir |
