Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/14188
Título: | Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition |
Autor(es): | Cerqueira, M. F. Andritschky, M. Rebouta, L. Ferreira, J. A. Silva, M. F. |
Palavras-chave: | Hydrogenated microcrystalline silicon Magnetron sputtering X-ray diffraction Raman spectroscopy |
Data: | 1995 |
Editora: | Elsevier 1 |
Revista: | Vacuum |
Resumo(s): | Hydrogenated microcrystalline silicon (microc-Si:H) thin films with Cu as a dopant material (about 2 wt.%) were deposited by RF planar magnetron sputtering in an argon/hydrogen plasma. The composition and microstructure of the films were analysed by SEM, ERD/RBS, X-ray diffraction and Raman spectroscopy. These techniques revealed a columnar film structure, each column consisting of several small (nano) crystals with a lateral dimension up to 10nm. The crystals are oriented, generally with the (111) plane parallel to the sample surface. The hydrogen content of the thin films is about 27-33 at.%. Low deposition rates and low sputter gas pressures favour crystallisation and grain growth. The behaviour can be understood in terms of the diffusion or relaxation length of the deposited Si-atoms. |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/14188 |
DOI: | 10.1016/0042-207X(95)00158-1 |
ISSN: | 0042-207X |
Versão da editora: | http://www.sciencedirect.com/science/article/pii/0042207X95001581 |
Arbitragem científica: | yes |
Acesso: | Acesso aberto |
Aparece nas coleções: | CDF - FMNC - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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RF-Si-Vac1995.pdf | Documento principal | 859,99 kB | Adobe PDF | Ver/Abrir |