Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/13507

TítuloComputational study of the presence of defects in semiconducting polymers on exciton formation
Autor(es)Correia, Helena M. G.
Barbosa, Helder M. C.
Ramos, Marta M. D.
Palavras-chaveQuantum modelling
Singlet exciton
Triplet exciton
Exciton formation energy
Semiconductor polymer
DataAgo-2011
EditoraSociety of Photo-optical Instrumentation Engineers (SPIE)
RevistaProceedings of SPIE
Resumo(s)Although semiconducting polymers are very attractive to be used in optoelectronic devices due to their molecular structure, they are not pristine semiconductors. After deposition it is possible to find out several structural and chemical defects, with different origins, that strongly influence exciton dynamics since they create deep energetic sites, where excitons can migrate leading to their quenching or reducing exciton diffusion length. By using a self-consistent quantum molecular dynamics method we performed a computational study to understand the influence of well-known polymer defects on excitons dynamics. Our results show that these defects influences mainly intramolecular exciton localization and exciton energy.
TipoArtigo em ata de conferência
URIhttps://hdl.handle.net/1822/13507
ISBN9780819485755
DOI10.1117/12.892203
ISSN0277-786X
Arbitragem científicayes
AcessoAcesso aberto
Aparece nas coleções:CDF - FCT - Artigos/Papers (with refereeing)

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