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https://hdl.handle.net/1822/11846
Título: | High-rate deposition of nano-crystalline silicon thin films on plastics |
Autor(es): | Marins, Emílio Sérgio Guduru, Virendra Ribeiro, Miguel Cerqueira, M. F. Bouattour, Ali Alpuim, P. |
Palavras-chave: | Nanocrystalline silicon Thin films High-rate deposition Solar cells |
Data: | 21-Jan-2011 |
Editora: | Wiley-VCH Verlag |
Revista: | Physica Status Solidi C |
Citação: | "Physica Status Solidi C". ISSN 1610-1642. 8:3 (Jan. 2011) 846-849. |
Resumo(s): | Nanocrystalline silicon (nc-Si:H) is commonly used in the bottom cell of tandem solar cells. With an indirect bandgap, nc-Si:H requires thicker (∼1 µm) films for efficient light harvesting than amorphous Si (a-Si:H) does. Therefore, thin-film high deposition rates are crucial for further cost reduction of highly efficient a–Si:H based photovoltaic technology. Plastic substrates allow for further cost reduction by enabling roll-to-roll inline deposition. In this work, high nc-Si:H deposition rates on plastic were achieved at low substrate temperature (150 °C) by standard Radio-frequency (13.56 MHz) Plasma Enhanced Chemical Vapor Deposition. Focus was on the influence of deposition pressure, inter-electrode distance (1.2 cm) and high power coupled to the plasma, on the hydrogen-to-silane dilution ratios (HD) necessary to achieve the amorphous-to-nanocrystalline phase transition and on the resulting film deposition rate. For each pressure and rf-power, there is a value of HD for which the films start to exhibit a certain amount of crystalline fraction. For constant rf-power, this value increases with pressure. Within the parameter range studied the deposition rate was highest (0.38 nm/s) for nc-Si:H films deposited at 6 Torr, 700 mW/cm2 using HD of 98.5 %. Decreasing the pressure to 3 Torr (1.5 Torr) and rf-power to 350 mW/cm2 using HD – 98.5 % deposition rate is 0.12 nm/s (0.076 nm/s). Raman crystalline fraction of these films is 72, 62 and 53 % for the 6, 3 and 1.5 Torr films, respectively. |
Tipo: | Artigo em ata de conferência |
URI: | https://hdl.handle.net/1822/11846 |
DOI: | 10.1002/pssc.201000288 |
ISSN: | 1610-1642 |
Versão da editora: | http://onlinelibrary.wiley.com |
Arbitragem científica: | no |
Acesso: | Acesso aberto |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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Marins_High-rate deposition_silicon films.pdf | pre-print | 459,54 kB | Adobe PDF | Ver/Abrir |