Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/57391

TitleImpact of the ferroelectric layer thickness on the resistive switching characteristics of ferroelectric/dielectric structures
Author(s)Silva, J. M. B.
Silva, J. P. B.
Sekhar, K. C.
Pereira, Mário
Gomes, M. J. M.
Issue date2018
PublisherAmerican Institute of Physics
JournalApplied Physics Letters
Abstract(s)In the present work, the effect of the ferroelectric layer thickness on the resistive switching (RS) characteristics of 0.5 Ba(Zr0.2Ti0.8)O3-0.5 (Ba0.7Ca0.3)TiO3 (BCZT)/HfO2:Al2O3 (HAO) structures deposited on Pt-Si substrates in a metal-dielectric-ferroelectric-metal configuration is investigated. The polarization-electric field hysteresis loops disclose the ferroelectric nature of the Pt/BCZT/ HAO/Au structures and reveal that the remnant polarization and the coercive field decrease with the increase in the BCZT ferroelectric layer thickness. Furthermore, the RS behavior is observed in Pt/BCZT/HAO/Au structures and is attributed to the barrier variation at the BCZT/HAO interface caused by the ferroelectric polarization flipping. Besides, it is also shown that the RS ratio and the switching field can be tuned by the thickness of the ferroelectric layer. This work intends to be a first step to build an alternative stack that provides an efficient way to develop dielectric-ferroelectric structures for RS memory devices with low power consumption.
TypeArticle
URIhttp://hdl.handle.net/1822/57391
DOI10.1063/1.5047853
ISSN0003-6951
e-ISSN1077-3118
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)


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