Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/33975

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Campo DCValorIdioma
dc.contributor.authorSilva, J. P. B.por
dc.contributor.authorSekhar, K. C.por
dc.contributor.authorAlmeida, A.por
dc.contributor.authorMoreira, J. Agostinhopor
dc.contributor.authorPereira, Mário R.por
dc.contributor.authorGomes, M. J. M.por
dc.date.accessioned2015-02-18T14:41:24Z-
dc.date.available2015-02-18T14:41:24Z-
dc.date.issued2013-
dc.identifier.issn0947-8396por
dc.identifier.urihttps://hdl.handle.net/1822/33975-
dc.description.abstractBaTiO3 thin films were deposited by pulsed laser deposition on Pt–Si at different laser pulse repetition frequencies. X-ray diffraction spectra show that preferred oriented films can be grown by adjusting the pulse repetition frequency. Enhanced dielectric and ferroelectric properties obtained in films deposited at 1 Hz is attributed to preferred orientation, low strain and homogeneous grain distribution. The films deposited at 1 Hz show an impressive remanent polarization of 21.4 µC/cm2 with a coercive field of 70.0 kV/cm. The shift in Curie temperature, which stems from changing the laser pulse repetition frequency, is associated with the strain state in the film.por
dc.description.sponsorshipThe author J.P.B.S. thanks FCT for financial support (grant SFRH/BD/44861/2008). K. C. S. thanks FCT for a post-doctoral grant (SFRH/BPD/68489/2010). This work has been partially funded by (i) FEDER through the COMPETE Program and by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Project PEST-C/FIS/UI607/2011 and (ii) European COST Actions MP0901-NanoTP and MP0903-NanoAlloy.por
dc.language.isoengpor
dc.publisherSpringerpor
dc.rightsrestrictedAccesspor
dc.titleInfluence of laser repetition rate on ferroelectric properties of pulsed laser deposited BaTiO3 films on platinized silicon substratepor
dc.typearticlepor
dc.peerreviewedyespor
sdum.publicationstatuspublishedpor
oaire.citationStartPage379por
oaire.citationEndPage384por
oaire.citationIssue2por
oaire.citationVolume113por
dc.identifier.doi10.1007/s00339-013-7948-0por
dc.subject.wosScience & Technologypor
sdum.journalApplied Physics A: Materials Science & Processingpor
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