Structural study of Si1-xGex nanocrystals embedded in SiO2 films

Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/13730

Título:	Structural study of Si1-xGex nanocrystals embedded in SiO2 films
Autor(es):	Pinto, S. R. C. Kashtiban, R. J. Rolo, Anabela G. Buljan, M. Chahboun, A. Bangert, U. Barradas, N. P. Alves, E. Gomes, M. J. M.
Palavras-chave:	Si1−xGex Nanocrystals SiO2 HRTEM GISAXS Raman Flash memory Semiconductor Si Ge 1 - x x
Data:	2010
Editora:	Elsevier
Revista:	Thin Solid Films
Resumo(s):	We have investigated the structural properties of Si1−xGex nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si1−xGex nanocrystals with average sizes between 3 and 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.
Tipo:	Artigo
URI:	https://hdl.handle.net/1822/13730
DOI:	10.1016/j.tsf.2009.09.148
ISSN:	0040-6090
Versão da editora:	http://www.sciencedirect.com/science/article/pii/S0040609009016186
Arbitragem científica:	yes
Acesso:	Acesso restrito UMinho
Aparece nas coleções:	CDF - FMNC - Artigos/Papers (with refereeing)