Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/61375

TitleZnO:Cu thin films and p-n homojunctions grown by electrochemical deposition
Author(s)Samantilleke, A. P.
Sahal, M.
Tortosa, M.
Mollar, M.
Mari, B.
Cerqueira, M. F.
Rebouta, L.
Vasilevskiy, Mikhail
KeywordsZnO
p-type
electrodeposition
Issue date2011
PublisherAmerican Institute of Physics
JournalAIP Conference Proceedings
Abstract(s)ZnO doped with Cu thin films were deposited on indium tin oxide coated glass substrates by electrodeposition using an electrolyte consisting of Cu and Zn perchlorates dissolved in dimethylsulfoxide. The Cu/Zn ratio measured in the thin films is about twice the Cu/Zn ratio present in the starting electrolyte. Irrespective of the Cu content, all the ZnO:Cu films exhibit a hexagonal wurtzite structure typical of ZnO with a preferential orientation along (002) direction. The p-type behaviour of ZnO:Cu films is inferred from the change in the sign of the photocurrent observed for Cu concentrations greater than 2%. Furthermore, a p-n homojunction with a rectifying factor 22 were prepared by electrodepositing of ZnO/ZnO:Cu layers.
TypeConference paper
URIhttp://hdl.handle.net/1822/61375
ISBN9780735410022
DOI10.1063/1.3666283
ISSN0094-243X
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - GRF - Comunicações/Communications (with refereeing)

Files in This Item:
File Description SizeFormat 
11- ICPS 30 p 115_ZnO-Cu.pdf371 kBAdobe PDFView/Open

Partilhe no FacebookPartilhe no TwitterPartilhe no DeliciousPartilhe no LinkedInPartilhe no DiggAdicionar ao Google BookmarksPartilhe no MySpacePartilhe no Orkut
Exporte no formato BibTex mendeley Exporte no formato Endnote Adicione ao seu ORCID