Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/61326

TitleInfluence of Al/Si atomic ratio on optical and electrical properties of magnetron sputtered Al1-xSixOy coatings
Author(s)Costa, Pedro Miguel Pinto
Al-Rjoub, A.
Rebouta, L.
Manninen, Nora Kristiina Alves Sousa
Alves, D.
Almeida, B. G.
Barradas, N. P.
Alves, E.
KeywordsSputtered Al1-xSixOy
Optical properties
Dielectric properties
Electrical conductivity
Sputtering
Aluminum silicon oxide
Issue date2019
PublisherElsevier B.V.
JournalThin Solid Films
CitationThin Solid Films 669 (2019) 475–481
Abstract(s)This work presents a study on the influence of the Al/Si atomic ratio in dc magnetron sputtered Al1-xSixOy amorphous and transparent films upon their chemical composition, films' structure, optical and electrical properties. Increasing silicon in Al1-xSixOy films, from 0 at.% up to 31.1 at.%, caused an increment of deposition rate and an increment in Al-O-Si energy bonds as confirmed by X-Ray Photoelectron Spectroscopy (XPS) analysis. On other hand, the optical constants (refractive index (n) and extinction coefficient (k)), dielectric constant, loss tangent (tan δ) and ac conductivity (σac) decrease when the amount of silicon in films increased. The results show that the refractive index shows small variations from linearity with vol% of Al2O3 (or SiO2). Dielectric constant and dielectric loss evidenced two dipolar contributions, attributed to defects located one at or near the substrate/oxide interface, and the other in the bulk of the oxide
TypeArticle
Description"Available online 22 November 2018"
URIhttp://hdl.handle.net/1822/61326
DOI10.1016/j.tsf.2018.11.036
ISSN0040-6090
Publisher versionwww.elsevier.com/locate/tsf
Peer-Reviewedyes
AccessOpen access
Appears in Collections:FUNCTIONAL AND SMART MATERIALS AND SURFACES FOR ADVANCED APPLICATIONS (2018 - ...)


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