Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/58960

TitleModification of the dielectric properties of TGS crystal grown under the influence of DC electric field with different strengths
Author(s)Arunmozhi, G.
Gomes, E. Matos
Ribeiro, José Luís Pires
KeywordsDc electric field
Dielectric permittivity
Hysteresis
Scanning electron microscope
Spontaneous polarization
Triglycine sulphate
Issue date2003
PublisherTaylor & Francis Ltd
JournalFerroelectrics
Abstract(s)TGS crystals grown under two different dc electric field strengths exhibit modified ferroelectric properties. The modifications show a dependence on the field strength applied during crystal growth. Prominent modifications were observed on crystals grown at high fields (80 kV/cm) than in crystals grown under lower dc electric fields (10 kV/cm). The modified ferroelectric properties stem from the domain structures influenced by the applied field. The domains on the low field grown crystals are more elongated and appear as thin strips. In the case of high dc field grown crystals, some of the domains are tilted under the influence of the field, resulting in the misalignment of the major axis of the domains with respect to the c-axis. The domain structure modifications under the influence of fields lead to an increase in the relaxation times. Reduced dielectric permittivity and spontaneous polarization also illustrate the effect created by the field.
TypeConference paper
URIhttp://hdl.handle.net/1822/58960
DOI10.1080/00150190390239369
ISSN0015-0193
Publisher versionhttps://www.tandfonline.com/doi/abs/10.1080/00150190390239369
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FAMO - Artigos/Papers (with refereeing)

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