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TitleAnnealing induced effect on the physical properties of ion-beam sputtered 0.5 Ba(Zr0.2Ti0.8)O3 – 0.5 (Ba0.7Ca0.3)TiO3-δ ferroelectric thin films
Author(s)Oliveira, M. J. S.
Silva, J. P. B.
Veltruská, K.
Matolín, V.
Sekhar, K. C.
Moreira, J. Agostinho
Pereira, M.
Gomes, M. J. M.
KeywordsFatigue characteristics
(0.5BZT–0.5BCT) thin film
Ion-beam sputtering deposition
X-ray photoelectron spectroscopy
Ion-beam sputtering deposition technique
Issue dateJun-2018
JournalApplied Surface Science
CitationOliveira, M. J. S., Silva, J. P. B., Veltruska, K., Matolín, V., Sekhar, K. C., Agostinho Moreira, J., ... & Gomes, M. J. M. (2018). Annealing induced effect on the physical properties of ion-beam sputtered 0.5 Ba (Zr0. 2Ti0. 8) O-3-0.5 (Ba0. 7Ca0. 3) TiO3-delta ferroelectric thin films. APPLIED SURFACE SCIENCE, 443, 354-360
Abstract(s)This work reports thermal annealing induced effect on the structural, optical, chemical and ferroelectric properties of ion-beam sputtered lead-free ferroelectric 0.5 Ba(Zr0.2Ti0.8)O3 – 0.5 (Ba0.7Ca0.3)TiO3-δ (0.5BZT–0.5BCT) thin films. X-ray diffraction studies reveal that the tetragonality increases with the annealing temperature (Ta), while photoluminescence and X-ray photoelectron spectroscopy studies confirm that this effect is associated with the annihilation of the oxygen vacancies as well as changes in the Ba2+ coordination. The films annealed at 750 °C show a remarkable remnant polarization of Pr = 45.0 μC/cm2, with a coercive field of 32 kV/cm. The temperature dependence of the spontaneous polarization of the 0.5BZT–0.5BCT film reveals a mean field behavior of the polarization and the fatigue study reveals that Pr only decreases 3% after passing 109 cycles. Therefore the high remnant polarization and its high Pr stability make these films as promising candidates for memory applications
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AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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