Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/5552

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dc.contributor.authorAlpuim, P.-
dc.contributor.authorFerreira, P.-
dc.contributor.authorChu, V.-
dc.contributor.authorConde, J. P.-
dc.date.accessioned2006-09-14T16:32:21Z-
dc.date.available2006-09-14T16:32:21Z-
dc.date.issued2002-04-01-
dc.identifier.citation"Journal of non-cristalline solids". ISSN 0022-3093. 299-302 Part 1 (Apr. 2002) 434-438.eng
dc.identifier.issn0022-3093eng
dc.identifier.urihttp://hdl.handle.net/1822/5552-
dc.description.abstractPerpendicular current transport through thin silicon nitride films deposited at 100 degreesC by radio frequency chemical vapor deposition (RF) is measured between patterned square contacts with side lengths between 5 and 200 mum. Hydrogen dilution, silane-to-ammonia ratio, and total gas flow were varied to achieve control of film properties. The dependence of the current on the applied field and measurement temperature are correlated to structural parameters such as the index of refraction, etching rate in buffered hydrofluoric acid and infrared vibrational band strengths. Using the appropriate deposition parameters, it is possible to prepare, at 100 degreesC, silicon nitride dielectric films with electronic properties compatible with use as gate dielectrics of thin-film transistors.eng
dc.description.sponsorshipFundação para a Ciência e Tecnologia (FCT) Universidade do Minho (UM)eng
dc.language.isoengeng
dc.publisherElsevier Scienceeng
dc.rightsopenAccesseng
dc.subjectChemical-vapor-depositioneng
dc.subjectHydrogen contenteng
dc.subjectFilmseng
dc.titleElectronic transport in low-temperature silicon nitrideeng
dc.typearticlepor
dc.peerreviewedyespor
dc.relation.publisherversionhttp://www.sciencedirect.comeng
sdum.pagination434-438eng
sdum.publicationstatuspublishedeng
sdum.volume299eng
dc.identifier.doi10.1016/S0022-3093(01)01017-1-
sdum.journalJournal of Non-cristalline Solidspor
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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